Determination of ionic conductivity in the Bi-Si-O and Pb-Si-O glasses

Impedance spectroscopy measurements in various gas atmospheres were carried out in order to explain the doubts about the type of carriers and the mechanism of electrical conductivity in Bi-Si-O and Pb-Si-O glasses. In bismuth silicate glass, a typical ionic conductivity with oxygen ions as charge carriers was observed. The level of electrical conductivity of the glass at 400 °C was 5 × 10^-8 S·cm^-1, with the activation energy of 1.3 eV and was independent of measuring atmosphere. In the case of lead silicate glasses, the conductivity changed with measuring atmosphere. Two types of charge carriers: oxygen ions and proton ions were postulated. Proton conductivity measured in wet argon at temperature 400 °C was estimated at the level of 4 × 10^-8 S·cm^-1 while the oxygen ions conductivity in such conditions was 78 × 10^-8 S·cm^-1. We suggest that both types of charge carriers are transported along the same conduction paths using oxygen defects in the glass structure.