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Effect Y substitution on the microstructure, transport and magnetic proprieties of Bi2Sr2Ca1Cu2O8+δ superconducting ceramics


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Fig. 1

The XRD patterns for Y0, Y0025, Y010 and Y025 samples.
The XRD patterns for Y0, Y0025, Y010 and Y025 samples.

Fig. 2

SEM images of the samples Y0, Y0025, Y010 and Y025.
SEM images of the samples Y0, Y0025, Y010 and Y025.

Fig. 3

Resistivity ρ(T) normalized against the value ρn at 100 K for (a) sample Y0, (b) sample Y0025, (c) sample Y010 and (d) sample Y025. The arrows in each figure indicate Tc0 where the zero resistance state ends (here for maximum applied field) and the threshold temperature Tt in the transition where the curves are no longer separated.
Resistivity ρ(T) normalized against the value ρn at 100 K for (a) sample Y0, (b) sample Y0025, (c) sample Y010 and (d) sample Y025. The arrows in each figure indicate Tc0 where the zero resistance state ends (here for maximum applied field) and the threshold temperature Tt in the transition where the curves are no longer separated.

Fig. 4

Arrhenius plots of the natural logarithm of reduced resistivity for samples (a) Y0, (b) Y0025, (c) Y010 and (d) Y025.
Arrhenius plots of the natural logarithm of reduced resistivity for samples (a) Y0, (b) Y0025, (c) Y010 and (d) Y025.

Fig. 5

The dependence of the activation energy U0 versus magnetic field.
The dependence of the activation energy U0 versus magnetic field.

Fig. 6

Dependence of the natural logarithm of normalized resistivity (ln(p/p100) of the samples on normalized temperature (U0/T).
Dependence of the natural logarithm of normalized resistivity (ln(p/p100) of the samples on normalized temperature (U0/T).

Fig. 7

Intercept of the curves from Fig. 6 in the limit 1/T→ 0.
Intercept of the curves from Fig. 6 in the limit 1/T→ 0.

Cell parameters (a, b, c), cell volume V, agreement factors (Rp) and goodness of fit (GOF) for the samples; values of the temperatures of transition onset: Tc, onset, Tc0max and Tc0min indicate the end of the zero resistance state without and with maximum applied magnetic field, respectively.

a [Å])b[Å]c[Å]V [Å3]Rp [%]GOFTc, onsetTc0minTc0max
Y05.3736575.40102230.80966894.19257.651.198836.453.7
Y00255.3738455.38696030.60010885.832810.282.9482.411.827.8
Y0105.3910145.38613630.51944886.184610.153.4610628.737.8
Y0255.4016975.38912130.30481882.18528.832.4790.5613.6
eISSN:
2083-134X
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties