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Titanium nitride coatings synthesized by IPD method with eliminated current oscillations


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Fig. 1

Schematic diagram of the IPD device equipped with diodes bank.
Schematic diagram of the IPD device equipped with diodes bank.

Fig. 2

Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).
Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).

Fig. 3

SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).
SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).

Fig. 4

X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).
X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).

Fig. 5

The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
eISSN:
2083-134X
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties