<abstract xmlns="http://www.w3.org/1999/xhtml"> A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2 mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+N2) and C4F8 - 1:1 and between N2 and Ar - 1:2 in the N2/Ar/C4F8 mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films. </abstract>

A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2 mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+N2) and C4F8 - 1:1 and between N2 and Ar - 1:2 in the N2/Ar/C4F8 mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films.

Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

Weizmann Institute of Science, Rehovot, Israel 2Tel Aviv University, Tel Aviv, Israel

Weizmann Institute of Science, Rehovot, Israel

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2...

Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

Published Online: Aug 30, 2016

Page range: 606 - 611

Received: Jan 13, 2014

Accepted: May 31, 2015

DOI: https://doi.org/10.1515/msp-2015-0088

Keywords
carbon deposition, reactive plasma, fluoridation

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

Published Online: Aug 30, 2016

Page range: 606 - 611

Received: Jan 13, 2014

Accepted: May 31, 2015

DOI: https://doi.org/10.1515/msp-2015-0088

Keywordscarbon deposition, reactive plasma, fluoridation

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Keywords
carbon deposition, reactive plasma, fluoridation