Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

1. Jones, E. A., Wang F. F., & Costinett, D. (2016). Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 707-719. 10.1109/JESTPE.2016.2582685Search in Google Scholar

2. Bortis, D., Knecht, O., Neumayr, D., & Kolar, J. W. (2016). Comprehensive evaluation of GaN GIT in low- and high-frequency bridge leg applications. In IEEE 8th International Power Electronics and Motion Control Conference, 22-25 May 2016 (pp. 21-30). Hefei, China. 10.1109/IPEMC.2016.7512256Search in Google Scholar

3. Rise of the 3rd Generation Semiconductor Silicon Carbide Technology. [Online]. Available at http://www.iabrasive.com/articles/rise-of-the-3rd-generation-semiconductor-silicon-carbide-technology. [Accessed: 04-Aug-2017]. Search in Google Scholar

4. Roschatt, P. M., McMahon, R. A., & Pickering, S. (2015). Investigation of dead-time behaviour in GaN DC-DC buck converter with a negative gate voltage. In 9th International Conference on Power Electronics and ECCE Asia, 1-5 June 2015 (pp. 1047-1052). Seoul, Korea. 10.1109/ICPE.2015.7167910Search in Google Scholar

5. Sørensen, C., Lindblad Fogsgaard, M., Christiansen, M. N., Kjeldal Graungaard, M., Nørgaard, J. B., Uhrenfeldt, C., & Trintis, I. (2015). Conduction, reverse conduction and switching characteristics of GaN E-HEMT. In 2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 22 -25 June 2015 (pp. 1-7). Aachen, Germany: IEEE Press. Search in Google Scholar

6. Strydom, J., & Reusch, D. (2013). Dead-time optimization for maximum efficiency. Efficient Power Conversion (EPC) Whitepaper. Search in Google Scholar

7. Hoffmann, L., Gautier, C., Lefebvre, S. & Costa, F. (2014). Optimization of the Driver of GaN Power Transistors through Measurement of Their Thermal Behavior. IEEE Transactions on Power Electronics, 29(5), 2359-2366. 10.1109/TPEL.2013.2277759Open DOISearch in Google Scholar

8. Chub, A., Zdanowski, M., Blinov A., & Rabkowski, J. (2016). Evaluation of GaN HEMTs for high-voltage stage of isolated DC-DC converters. In 10th International Conference on Compatibility, Power Electronics and Power Engineering, 29 June-1 July 2016 (pp. 375-379). IEEE. 10.1109/CPE.2016.7544217Search in Google Scholar

9. PCB Thermal Design Guide for GaN Enhancement Mode Power Transistors. [Online]. Available at http://www.ecomal.com/fileadmin/Datenblaetter/GaN_Systems/App_Notes/GN005_App_Note-PCB_Thermal_Design_Guide_for_GaN_Enhancement_Mode_Power_Transistors.pdf [Accessed: 06-Aug-2017]. Search in Google Scholar

10. Matiushkin, O., Husev, O., Tytelmaier, K., Kroics, K., Veligorskyi, O., & Zakis, J. (2017). Comparative analysis of qZS-based bidirectional dc-dc converter for storage energy application. In Technological Innovation for Smart Systems, 3-5 May 2017 (pp. 409-418). Costa de Caparica, Portugal.10.1007/978-3-319-56077-9_40Search in Google Scholar

11. Kroics, K., Zakis, J., & Husev, O. (2017). Capacitance reduction using ripple suppression control of single phase energy stored quasi-z-source inverter. In 11th International Scientific and Practical Conference Environment. Technology. Resources, 15-17 June 2017 (pp. 154-158). Rezekne Academy of Technology. 10.17770/etr2017vol3.2621Search in Google Scholar

12. Makovenko, E., Husev, O., Zakis, J., Roncero-Clemente, C., Romero-Cadaval, E., & Vinnikov, D. (2017). Passive power decoupling approach for three-level single-phase impedance source inverter based on resonant and PID controllers. In 11th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, 4-6 April 2017 (pp. 516-521). IEEE. 10.1109/CPE.2017.7915225Search in Google Scholar

13. Lidow, A., Strydom, J., de Rooij, M., & Reusch, D. (2014). GaN transistors for efficient power conversion. New Jersey: Willey. 10.1002/9781118844779Search in Google Scholar

14. Rothmund, D., Bortis, D., & Kolar, J. W. (2016). Accurate transient calorimetric measurement of soft-switching losses of 10kV SiC MOSFETs. In IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 27-30 June 2016 (pp. 1-10). IEEE. 10.1109/PEDG.2016.7527030Search in Google Scholar

15. Hoffmann, L., Gautier, C., Lefebvre, S., & Costa, F. (2013). Thermal measurement of losses of GaN power transistors for optimization of their drive. In 15th European Conference on Power Electronics and Applications (EPE), 2-6 September 2013 (pp. 1-8). Lille, France. 10.1109/EPE.2013.6634623Search in Google Scholar

16. Han, D., & Sarlioglu, B. (2016). Deadtime effect on GaN-based synchronous boost converter and analytical model for optimal deadtime selection. IEEE Transactions on Power Electronics, 31(1), 601-612. 10.1109/TPEL.2015.2406760Open DOISearch in Google Scholar

17. Si826x: 5 kV LED Emulator Input, 4.0 A Isolated Gate Drivers . [Online]. Available at https://www.silabs.com/documents/public/data-sheets/Si826x.pdf [Accessed: 08-Aug-2017]. Search in Google Scholar

18. Zhao, C., Trento, B., Jiang, L., Jones, E. A., Liu, B., Zhang, Z., … Langley, R. (2016). Design and implementation of a GaN-based, 100-kHz, 102-W/in3 single-phase inverter. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 824-840. 10.1109/JESTPE.2016.2573758Search in Google Scholar