Cite

[1] CHOI, W.-LAHIRI, I.-SEELABOYINA, R.-KANG, Y. S. : Synthesis of Graphene and its Applications: a Review, Cri. Rev. Solid State Mater. Sci. 35 No. 01 (2010), 52-71.10.1080/10408430903505036Search in Google Scholar

[2] NOVOSELOV, K. S.-GEIM, A. K.-MOROZOV, S. V.-JIANG, D.-ZHANG, Y.-DUBONOS, S. V.-GRIGORIEVA, I. V.-FIRSOV, A. A. : Electric Field Effect in Atomically Thin Carbon Films, Science 306 No. 5696 (2004), 666-669.10.1126/science.110289615499015Search in Google Scholar

[3] SCHEDIN, F.-GEIM, A. K.-MOROZOV, S. V.-HILL, E. W.-BLAKE, P.-KATSNELSON, M. I.-NOVOSELOV, K. S. : Detection of Individual Gas Molecules Adsorbed on Gra- phene, Natur. Mater. 6 No. 9 (2007), 65275-655.Search in Google Scholar

[4] TANAKA, S.-MORITA, K.-HIBINO, H. : Anisotropic Layer- by-Layer Growth of Grapheneon Vicinal SiC(0001) Surfaces, Phys. Rev. B 81 No. 04 (2010), 041406.Search in Google Scholar

[5] OSTLER, M.-SPECK, F.-GICK, M.-SEYLLER, T. : Au- tomated Preparation of High-Quality Epitaxial Graphene on 6H-SiC(0001), Phys. Status Solidi B 247 No. 11-12 (2010), 2924-2926.Search in Google Scholar

[6] JUANG, Z. Y.-WU, C. Y.-LU, A. Y.-SU, C. Y.-LEOU, K. C.-CHEN, F. R.-TSAI, C. H. : Graphene Synthesis by Chem- ical Vapour Deposition and Transfer by a Roll-to-Roll Process, Carbon 48 No. 11 (2010), 3169-3174.10.1016/j.carbon.2010.05.001Search in Google Scholar

[7] JUANG, Z. Y.-WU, C. Y.-LO, C. W.-CHEN, W. Y.-JUANY, C. F.-HWANG, J. C.-CHEN, F. R.-LEOU, K. C.-TSAI, C. H. : Synthesis of Graphene on Silicon Carbide Substrates at Low Temperature, Carbon 47 No. 08 (2009), 2026-2031.10.1016/j.carbon.2009.03.051Search in Google Scholar

[8] MACHAC, P.-FIDLER, T.-CICHON, S.-JURKA, V. : Syn- thesis of Graphene on Co/SiC Structure, J. Mater. Sci.: Mater. Electron. 24 No. 10 (2013), 3793-3799.Search in Google Scholar

[9] CANADO, L. G.-TAKAI, K.-ENOKI, T.-ENDO, M.-KIM, Y. A.-MIZUSAKI, H.-JORIO, A.-COELHO, L. N.-MAGALHAES-PANIAGO, R.-PIMENTA, M. A. : General Equation for the Determination of the Crystallite Size La of Nanographite by Raman Spectroscopy, Applied Phys. Lett. 88 No. 03 (2006), 163106.10.1063/1.2196057Search in Google Scholar

[10] HAO, Y.-WANG, Y.-WANG, L.-NI, Z.-WANG, R.-KOO, C. K.-SHEN, Z.-THONG, J. T. L. : Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy, Small 6 No. 02 (2010), 195-200.10.1002/smll.20090117319908274Search in Google Scholar

[11] WOLAN, J. T.-GRAYSON, B. A.-KOHLSCHEEN, J.-EMIROV, Y.-SCHLAF, R.-SWARTZ, W.-SADDOW, S. E. : Effect of Hydrogen Etching and Subsequent Sacrificial Thermal Oxidation on Morphology and Composition of 4H-SiC Surfaces, J. Electronic Mat. 31 No. 05 (2002), 380-385.10.1007/s11664-002-0087-6Search in Google Scholar

eISSN:
1339-309X
Language:
English
Publication timeframe:
6 times per year
Journal Subjects:
Engineering, Introductions and Overviews, other