Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

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This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

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Metrology and Measurement Systems

The Journal of Committee on Metrology and Scientific Instrumentation of Polish Academy of Sciences

Journal Information

IMPACT FACTOR 2016: 1.598

CiteScore 2016: 1.58

SCImago Journal Rank (SJR) 2016: 0.460
Source Normalized Impact per Paper (SNIP) 2016: 1.228


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