Nanoindentation Response analysis of Thin Film Substrates-I: Strain Gradient-Divergence Approach

  • 1 Institute of Mechanical Engineering, Riga Technical University, 6 Ezermalas Str., LV-1006, Riga, Latvia
  • 2 Institute of Neuroinformatics, University & ETH of Zurich, 190 Winterthurerstr., CH-8057 Zurich, Switzerland

Abstract

Nanoindentation is a widely-used method for sensitive exploration of the mechanical properties of micromechanical systems. We derive a simple empirical analysis technique to extract stress-strain field (SSF) gradient and divergence representations from nanoindentation data sets. Using this approach, local SSF gradients and structural heterogeneities can be discovered to obtain more detail about the sample’s microstructure, thus enhancing the analytic capacity of the nanoindentation technique. We demonstrate the application of the SSF gradient-divergence analysis approach to nanoindentation measurements of bulk silicon.

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