Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

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The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

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Journal of Electrical Engineering

The Journal of Slovak University of Technology

Journal Information

IMPACT FACTOR 2017: 0.508
5-year IMPACT FACTOR: 0.549

CiteScore 2016: 0.93

SCImago Journal Rank (SJR) 2015: 0.231
Source Normalized Impact per Paper (SNIP) 2015: 0.505


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