Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Petr Macháč 1 , Ondřej Hejna 1 ,  and Petr Slepička 1
  • 1 University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6, Czechia


The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

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