Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Zdeněk Chobola 1 , Miroslav Luňák 1 , Jiří Vaněk 2 , Eduard Hulicius 3  and Ivo Kusák 1
  • 1 Faculty of Civil Engineering, Department of physics, Brno University of Technology, Žižkova 17, 602 00 Brno, Czech Republic
  • 2 Faculty of Electrical Engineering and Communication, Department of Electrotechnology, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic
  • 3 Department of Physics AVČR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic

Abstract

The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.

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