Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Open access

Abstract

The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-k dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10−6 A/mm can be achieved for the acceptor dopant concentration at the level of 5 X 1015 cm−3. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

[1] B.J. Baliga: Gallium nitride devices for power electronic applications, Semicond. Sci. Technol., 28, 074011, (2013).

[2] W. Saito et al.: Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications, IEEE Tran. on Electron Devices, vol.53, no.2, pp.356-362, (2006).

[3] Y. Cai et al.: High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment, IEEE Elec. Dev. Letters, vol.26, no.7, pp. 435-437, (2005).

[4] O. Hilt et al.: Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer, Proceedings of 22nd Int. Symp. on Power Semiconductor Devices & IC’s (ISPSD), pp.347-350, (2010).

[5] K.-S. Im et al.: Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure with Extremely High 2DEG Density Grown on Silicon Substrate, IEEE Elec. Dev. Letters, vol.31, no.3, pp.192-194, (2010).

[6] http://www.silvaco.com/products/tcad/device\_simulation/atlas/atlas. html

[7] J.L. Lyons, A. Janotti, C.G. Van de Walle: Carbon impurities and the yellow luminescence in GaN, App. Phys. Lett. 97, 152108, (2010).

[8] M.J. Uren et al.: Buffer design to minimize current collapse in GaN/AlGaN HFETs, IEEE Tran. on Electron Devices, vol.59, no.12, pp.3327-3333, (2012).

[9] H. Morkoc, Handbook of Nitride Semiconductors and Devices, Volume 1, Materials Properties, Physics and Growth. Wiley, Weinheim (2009).

[10] M. Farahmand et al.: Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries. IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 535-542, (2001).

[11] Y. Wang et al.: High-performance normally-Off AbCVGaN MOSFET using a wet etching-based gate recess technique, IEEE Tran. on Electron Devices, vol.34, no.11, pp.1370-1372, (2012).

[12] Y. Niiyama et al.: Normally off operation GaN-based MOSFETs for power electronics applications, Semicond. Sci. Technol., 25, 125006, (2010).

[13] T.E. Cook Jr. et al.: Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001), J. Appl. Phys. 93, 3995, (2003).

[14] J.J. Freedsman et al.: Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V), Appl. Phys. Express, 7, 04100, (2014).

[15] W. Ahn et al.: Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and RF-sputtered HfO2 gate insulator, Proceedings of 25th Int. Symp. on Power Semiconductor Devices & IC’s (ISPSD), pp.311-314, (2013).

International Journal of Electronics and Telecommunications

The Journal of Committee of Electronics and Telecommunications of Polish Academy of Sciences

Journal Information


CiteScore 2016: 0.72

SCImago Journal Rank (SJR) 2016: 0.248
Source Normalized Impact per Paper (SNIP) 2016: 0.542

Cited By

Metrics

All Time Past Year Past 30 Days
Abstract Views 0 0 0
Full Text Views 159 159 21
PDF Downloads 72 72 8