Based on Gauss’ law for the electric field, new formulas were deduced, that enable for the first time the writing of an analytical formula of the built-in potential of implanted and diffused semiconductor junctions. Consequently, in this work is devised a measurement technique for the built-in potential of such junctions. Such measurement is useful because new semiconductor materials besides silicon are more and more used today, like silicon-carbide (SiC) and gallium-nitride (GaN), which have larger bandgap and junction built-in potential. Finding the built-in potential helps adjusting the computer assisted design (CAD) tools and validates the simulation of such wide-bandgap devices.
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