Spin Coating Method Fabricated of In₂O₃ Thin Films

In this work, the In₂O₃ thin films have been fabricated using a spin coating technique; this technique was prepared in our laboratory. The effect of the layer times (3, 5, 7 and 9 times) on optical and structural properties was investigated. In₂O₃ thin films were fabricated by dissolving 0.2 M of the indium chloride dehydrate InCl₃.2H₂O in the absolute H2O. The In₂O₃ thin films were crystallized at a temperature of 600 °C with pending time of 1 hour. The optical property shows that the prepared In₂O₃ thin films for 3 and 5 times have a transmission of about 85 %. The maximum bandgap energy was 3.69 eV for 5 times and the lowest Urbach energy was 0.47 eV for 9 times. From XDR all fabricated In₂O₃ thin films having one diffraction crystal plan is (222) peak intensity, this attribution have good crystalline structure with minimum crystallite size of the (222) plan is 59.69 nm. The prepared In₂O₃ thin films can be used in photovoltaic applications due to the existing phase and higher transmission.