###### Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

References 1. Pensl, G., & Choyke, W.J. (1993). Electrical and optical characterization of SiC. Physica B, 185, 264-283. 2. Cheung, R. (2006). Silicon Carbide Microelectromechanical Systems for Harsh Environments. Imperial College Press, Сh. 3, ISBN 1860946240. 3. Shenghuang Lin, Zhiming Chen, Lianbi Li, Yintu Ba, Sujuan Liu, & Mingchao Yang (2012). Investigation of micropipes in 6 H-SiC by Raman scattering. Physica, B40, 670-673. 4. Nakashima, S., & Harima, H. (1997). Raman investigation of SiC

###### Multiplicative topological descriptors of Silicon carbide

)}{\sqrt{\frac{{{d}_{u}}+{{d}_{v}}-2}{{{d}_{u}}\cdot {{d}_{v}}}}}, \\\,\,\,\,\,GAII\left( G \right)=\prod\limits_{uv\in E\left( G \right)}{\frac{2\sqrt{{{d}_{u}}\cdot {{d}_{v}}}}{{{d}_{u}}+{{d}_{v}}}}, \\G{{A}^{a}}II\left( G \right)=\prod\limits_{uv\in E\left( G \right)}{{{\left( \frac{2\sqrt{{{d}_{u}}\cdot {{d}_{v}}}}{{{d}_{u}}+{{d}_{v}}} \right)}^{\alpha }}.} \\\end{array}$$ 2 Silicon Carbide In 1891, an American scientist discover Silicon Carbide. But now a days, we can produce silicon carbide artificially by silica and carbon. Till 1929, silicon carbide was known as the hardest

###### Multifractal characterization of epitaxial silicon carbide on silicon

## Abstract

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

###### A hierarchy of hydrodynamic models for silicon carbide semiconductors

. 7. G. Lebon, D. Jou, and J. Casas-Vázquez, Understanding Non- equilibrium Thermodynamics. Springer-Verlag, 2008. 8. I. Mueller and T. Ruggeri, Rational Extended Thermodynamics. Springer-Verlag, 1998. 9. O. Muscato and V. D. Stefano, Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model, SIAM J. APPL. MATH., vol. 75, no. 4, pp. 1941-1964, 2015. 10. A. Jüngel, Energy transport in semiconductor devices, Math. Comput. Model. Dyn. Syst., vol. 16, pp. 1-22, 2010. 11. G

###### Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

References [1] KANNO, H.-IDE, D.-TSUNOMURA, Y.-TAIRA, S.-BABA, T.-YOSHIMINE, Y.-TAGUCHI, M.-KINOSHITA, T.-SAKATA, H.-MARUYAMA, E. : Over 22% Efficient HIT Solar Cell, In: Proceedings of the 23rd European photovoltaic solar energy conference and exhibition, Valencia, Spain, 2008, pp. 1136-1139. [2] STREET, R. A. : Technology and Applications of Amorphous Silicon, Springer, New York, 2000. [3] CHANG, Y. L.-CHEN, M. Y.-LIU, J. S. Q.-CHIEN, Y. J.-YANG, P. C.-HUANG, M. Y. : Silicon Carbide Emitter for Heterojunction

###### Electric measurements of PV heterojunction structures a-SiC/c-Si

R eferences [1] D. A. Anderson and W. E. Kspear, “Electrical and Optical Properties of Amorphous Silicon Carbide, Silicon Nitride and Germanium Carbide Prepared by Glow Discharge Technique”, Philos. Mag. B vol. 35, 1977, pp. 113–131. [2] P. P. Dey and A. Khare, “Effect of Substrate Temperature on Structural and Linear and Nonlinear Optical Properties of Nanostructured PLD a-SiC thin films”, Materials Research Bulletin vol. 84, 2016, pp. 105–117. [3] I. Kleps and A. Angelescu, “LPCVD Amorphous Silicon Carbide Films, Properties and

###### Influence of load and reinforcement content on selected tribological properties of Al/SiC/Gr hybrid composites

. Study Of Mechanical And Tribological Properties Ofal-6061 Reinforced With Silicon Carbide And Graphite Particles , International Journal of Technology Enhancements and Emerging Engineering Research, 3(4). R avindran , P., M anisekar , K., R athika , P., N arayanasamy , P. 2013. Tribological properties of powder metallurgy – Processed aluminium self-lubricating hybrid composites with SiC additions , Materials and Design, 45, 561–570. R adhika , N., S ubramanian , R., V enkat P rasat , S., A nandavel , B. 2012. Dry sliding wear behaviour of aluminium

###### Synthesis of SiC nanowhiskers from graphite and silica by microwave heating

1 Introduction Silicon carbide (SiC) is one of the most popular ceramics used in the industry. It has unique characteristics such as high melting point, excellent oxidation resistance, high chemical inertness, high-thermal conductivity, good microwave absorbing ability, wide energy band gap and high mechanical strength enabling SiC to be used widely in aerospace structures, biomaterials and high temperature semiconducting devices [ 1 – 6 ]. SiC is produced mainly in industry by Acheson process. This process named after its inventor Edward Goodrich Acheson

###### Design of AC-DC Grid Connected Converter using Multi-Objective Optimization

## Abstract

Power electronic circuits, in particular AC-DC converters are complex systems, many different parameters and objectives have to be taken into account during the design process. Implementation of Multi-Objective Optimization (MOO) seems to be attractive idea, which used as designer supporting tool gives possibility for better analysis of the designed system. This paper presents a short introduction to the MOO applied in the field of power electronics. Short introduction to the subject is given in section I. Then, optimization process and its elements are briefly described in section II. Design procedure with proposed optimization parameters and performance indices for AC-DC Grid Connected Converter (GCC) interfacing distributed systems is introduced in section III. Some preliminary optimization results, achieved on the basis of analytical and simulation study, are shown at each stage of designing process. Described optimization parameters and performance indices are part of developed global optimization method dedicated for ACDC GCC introduced in section IV. Described optimization method is under development and only short introduction and basic assumptions are presented. In section V laboratory prototype of high efficient and compact 14 kVA AC-DC converter is introduced. The converter is elaborated based on performed designing and optimization procedure with the use of silicon carbide (SiC) power semiconductors. Finally, the paper is summarized and concluded in section VI. In presented work theoretical research are conducted in parallel with laboratory prototyping e.g. all theoretical ideas are verified in laboratory using modern DSP microcontrollers and prototypes of the ACDC GCC.

###### Extended T-type Inverter

## Abstract

This paper presents a new concept for a power electronic converter - the extended T-type (eT) inverter, which is a combination of a three-phase inverter and a three-level direct current (dc)/dc converter. The novel converter shows better performance than a comparable system composed of two converters: a T-type inverter and a boost converter. At first, the three-level dc/dc converter is able to boost the input voltage but also affects the neutral point potential. The operation principles of the eT inverter are explained and a simulation study of the SiC-based 6 kVA system is presented in this paper. Presented results show a serious reduction of the DC-link capacitors and the input inductor. Furthermore, suitable SiC power semiconductor devices are selected and power losses are estimated using Saber software in reference to a comparative T-type inverter. According to the simulations, the 50 kHz/6 kVA inverter feed from the low voltage (250 V) shows <2.5% of power losses in the suggested SiC metal oxide-semiconductor field-effect transistors (MOSFETs) and Schottky diodes. Finally, a 6 kVA laboratory model was designed, built and tested. Conducted measurements show that despite low capacitance (2 × 30 μF/450 V), the neutral point potential is balanced, and the observed efficiency of the inverter is around 96%.