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Ladislav Harmatha, Miroslav Mikolášek, L’ubica Stuchlíková, Arpád Kósa, Milan Žiška, Ladislav Hrubčín and Vladimir A. Skuratov

R eferences [1] TANAKA, M.—TAGUCHI, M.—MATSUYAMA, T.—SAWADA, T.—TSUDA, S. H.—NAKANO, S. H.—HANAFUSA, H.—KUWANO, Y. : Development of New a-Si/c-Si Hetero-junction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer), Jpn. J. Appl. Phys. 31 No. 11 (1992), 3518–3522. [2] TERAKAVA, A.—ASAUMI, H. T.—KOBAYASHI, S.—TSUNOMURA, Y.—YAGIURA, T.—TAGUCHI, M.—YOSHIMINE, Y.—SAKATA, H.—MARUYAMA, E.—TANAKA, M. : High Efficiency HIT TM Solar Cells and Effects of Open Circuit Voltage on Temperature Coefficients, Proceedings

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Miroslav Mikolášek, Michal Nemec, Jaroslav Kováč, Ladislav Harmatha and Lukáš Minařík

Evaluation of the Series Resistance of Solar Cells, Solid-State Electron. 22 (Feb 1979), 193-197. [13] DING, K.-AEBERHARD, U.-FINGER, F.-RAU, U. : Silicon Heterojunction Solar Cell with Amorphous Silicon Oxide Buffer and Microcrystalline Silicon Oxide Contact Layers, Phys. status solidi - Rapid Res. Lett. 6 No. 5 (May 2012), 193-195. [14] MISHIMA, T.-TAGUCHI, M.-SAKATA, H.-MARUYAMA, E. : Development Status of High-Efficiency HIT Solar Cells, Sol. Energy Mater. Sol. Cells 95 No. 1 (Jan 2011), 18-21. [15] TSUNOMURA, Y

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Miroslav Mikolášek, Ján Jakaboviš, Vlastimil Řeháček, Ladislav Harmatha and Robert Andok

References [1] FUHS, W.—NIEMANN, K.—STUKE, J.: Heterojunctions of Amorphous Silicon & Silicon Single Crystals, In: Intern. Conference, Tetrahedrally Bonded Amorphous Semiconductors, York-town Hts., NY, vol. 20, 1974, pp. 345–350. [2] HAMAKAWA, Y. et al : New Types of High Efficiency Solar Cells based on a-Si, Applied Physics Letters 43 (1983), 644–646. [3] YANO, A.—TOHODA, S.—MATSUYAMA, K. et al : 24.7% Record Efficiency HIT(r) Solar Cell on Thin Silicon Wafer, In: 28th European Photovoltaic Solar Energy Conference and Exhibition: Proceedings, Paris

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Milan Perný, Vladimír Šály, Michal Váry, Miroslav Mikolášek, Jozef Huran and Juraj Packa

References [1] KANNO, H.-IDE, D.-TSUNOMURA, Y.-TAIRA, S.-BABA, T.-YOSHIMINE, Y.-TAGUCHI, M.-KINOSHITA, T.-SAKATA, H.-MARUYAMA, E. : Over 22% Efficient HIT Solar Cell, In: Proceedings of the 23rd European photovoltaic solar energy conference and exhibition, Valencia, Spain, 2008, pp. 1136-1139. [2] STREET, R. A. : Technology and Applications of Amorphous Silicon, Springer, New York, 2000. [3] CHANG, Y. L.-CHEN, M. Y.-LIU, J. S. Q.-CHIEN, Y. J.-YANG, P. C.-HUANG, M. Y. : Silicon Carbide Emitter for Heterojunction

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Samir Meziani, Abderrahmane Moussi, Linda Mahiou and Ratiba Outemzabet

1 Introduction Amorphous silicon nitride films are known to be very useful for different aspects in materials science. These films are used as an excellent material for technological applications [ 1 ], including solar cells [ 2 ], radiative cooling [ 3 ], gate dielectric [ 4 ], etc. Silicon nitride (SiN x ) films can be deposited by different CVD techniques. PECVD is one of the methods most often used. The use of SiH 4 as a silicon source and NH 3 as a nitrogen source produces commonly a substantial amount of hydrogen ( > 10 at.%) in the films, forming