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transition-metal thin films have been developed by many researchers using PVD techniques, such as vacuum arc evaporation [ 5 , 6 ], cathode arc  , reactive sputtering [ 8 – 10 ] and ion plating [ 11 , 12 ], etc. Out of these deposition techniques, sputtering was modified with supported discharge/triode magnetronsputtering. DC sputtering method with supported discharge gives high purity, good adhesion and high deposition rates due to lower operation pressure even at room temperature deposition, controlled deposition rates and crystalline structure in nanoscale
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Pulsed magnetron sputtering of metal targets in the presence of reactive gas is widely used to deposit compound materials. This method is very popular but still the aim of research is to obtain more stable and efficient processes. The standard procedure of compound thin film deposition is sputtering in so called reactive mode of magnetron work — sputtering of the target surface covered with the formed compound. The authors postulate that the problem of low deposition rate of reactive compounds can be solved if the magnetron source operates in the metallic mode or near the border of metallic and transient mode. Aluminium oxide thin films were deposited using high effective reactive pulsed magnetron sputtering. The main purpose of the research was electrical characterization of metal-compound-metal structures in the wide range of frequencies and determination of deposition technique influence on the thin film properties.
AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.