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Petr Machac and Tomas Hrebicek

Molecules Adsorbed on Gra- phene, Natur. Mater. 6 No. 9 (2007), 65275-655. [4] TANAKA, S.-MORITA, K.-HIBINO, H. : Anisotropic Layer- by-Layer Growth of Grapheneon Vicinal SiC(0001) Surfaces, Phys. Rev. B 81 No. 04 (2010), 041406. [5] OSTLER, M.-SPECK, F.-GICK, M.-SEYLLER, T. : Au- tomated Preparation of High-Quality Epitaxial Graphene on 6H-SiC(0001), Phys. Status Solidi B 247 No. 11-12 (2010), 2924-2926. [6] JUANG, Z. Y.-WU, C. Y.-LU, A. Y.-SU, C. Y.-LEOU, K. C.-CHEN, F. R.-TSAI, C. H. : Graphene Synthesis by Chem- ical

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M.R. Silva, L.B.S. Silva, D. Rodrigues Junior and C.R. Grandini

). [12] M.R. Silva, C.R. Grandini, Influence of heat treatment on the anelastic properties of MgB2, Mat. Sci. Forum 660-661, 832-836 (2010). [13] K. Vinod, N. Varghese, U. Syamaprasad, Superconductivity of MgB2 in the BCS framework with emphasis on extrinsic effects on critical temperature, Superc. Sci. Tech. 20, R31-R43 (2007). [14] N. Srikanth, M. Gupta, Damping characterization of Mg-SiC composites using an integrated suspended beam method and new circle-fit approach, Mat. Res. Bull. 37, 1149-1162 (2002). [15] N

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Łukasz Gelczuk, Maria Dąbrowska-szata and Zdzisław Synowiec

[1] NEUDECK P. G., SiC Technology, in: Wai-Kai Chen, Boca Raton (Eds.) The VLSI Handbook 2nd, Florida: CRC Press, 2007. [2] SYNOWIEC Z., Mater. Electron., 32 (2004), 5. [3] LANG D.V, J. Appl. Phys., 45 (1974), 3023. http://dx.doi.org/10.1063/1.1663719 [4] FERENCZI G. and KISS J., Acta Phys. Acad. Sci. Hung., 50 (1981), 285. http://dx.doi.org/10.1007/BF03159444 [5] GELCZUK ł., DĄBROWSKA-SZATA M., JOŹWIAK G., Mat. Sci. Poland, 23 (2005

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Wojciech Wojtasiak and Daniel Gryglewski

References S. M. Sze, Semiconductors Devices: Physics and Technology , 2nd ed. New York: John Wiley and Sons Inc, 2002. R. Clarke, C. Brandt, S. Sriram, R. Siergiej, A. Morse, A. Agarwal, L. Chen, V. Balakrishna, A. Burk, and Northrop Grumman Corp., Pittsburgh, PA, "Recent Advances in High Temperature, High Frequency SiC," in Proceedings of High-temerature Electronics Materials, Devices and Sensors Conference , 1998, pp. 18-28. D. Parker and D. C. Zimmermann, "Phased Arrays—Part I

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M. Śusniak, J. Karwan-Baczewska, J. Dutkiewicz, M. Actis Grande and M. Rosso

References [1] N. Zhao, P. Nash, X. Yang, The effect of mechanical alloying on SiC distribution and properties of 6061 aluminum composite, Journal of Materials Processing Technology 170 , 586-592 (2005). [2] C. Suryanarayana, Mechanical alloying and milling, Progress in Materials Science 46 , 1-184 (2001). [3] M. Samuel, A new technique for recycling aluminum scrap, Journal of Materials Processing Technology 135 , 117-124 (2003). [4] J.B. Fogagnolo, E.M. Ruiz - Navas, M.A. Simón, M

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Tomasz Tarczewski, Michal Skiwski, Lech M. Grzesiak and Marek Zieliński

Bolognani, S. (2013). Model Predictive Direct Speed Control with Finite Control Set of PMSM Drive Systems. IEEE Transactions on Power Electronics, 28(2), pp. 1007-1015. Sarnowska, A. and Rąbkowski, J. (2016). Hard and soft switching operation of the half-bridge based on 900V SiC MOSFETs. In: IEEE IECON Conference, Italy. pp. 7167-7172. Shin, H.-B. and Park, J.-G. (2012). Anti-Windup PID Controller with Integral State Predictor for Variable- Speed Motor Drives. IEEE Transactions on Industrial Electronics, 59(3), pp. 1509

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A. Taube, M. Guziewicz, K. Kosiel, K. Gołaszewska-Malec, K. Król, R. Kruszka, E. Kamińska and A. Piotrowska

R eferences [1] M. Levinshtein, S. Rumyantsev and M. Shur, Handbook Series on Semiconductor Parameters: Volume 2: Ternary And Quaternary III-V Compounds , World Scientific, London, 1996, 1999. [2] B.J. Baliga., Silicon Carbide Power Devices , World Scientific, Singapore, 2006. [3] D. Okamoto, H. Yano, K. Hirata, T. Hatayama and T. Fuyuki, “Improved inversion channel mobility in 4H-SiC MOSFETs on Si face utilizing phosphorus-doped gate oxide”, IEEE Elec. Dev. Let ., 31(7), 710–712 (2010). [4] J. Robertson, “High dielectric constant gate

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Michał Bonisławski and Marcin Hołub

References Teresa Sierra M., Gabiola I., Pujana A. et al., Analysis of energy losses for SiC and Si diodes in half-bridge modules and future applications. EPE, Birmingham, UK (2011). Changl H.-R., Hannal E., Radun A. V., Development and demonstration of silicon carbide (SiC) motor drive inverter modules. power electronics specialist conference. PESC '03 (2003). Ozpineci B., Sudhan Chinthavali M., Tolbert L. M., A 55-kW three-phase inverter with Si IGBTs and SiC schottky diodes

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Joanna Ćwirko, Robert Ćwirko and Janusz Mikołajczyk

Measurement Systems, XXI, 4, 565-618. [4] Bielecki, Z., Kolosowski, W; Dufrene, R., Sedek, E., Wojtas, J. (2004), Photoreceiver for BLU/UV detection, Proc. SPIE 5472, 383, DOI:10.1117/12.547653. [5] Shur, M. S., Zakauskas, A. (2003), UV Solid-State Light Emitters and Detectors. NATO Science Series., II (144), ISBN 1-4020-2103-8 (e-book). [6] Liu, H-D. (2006), Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes, IEEE Photonics Technology Letters, 18 (23), 2508-2510. [7] Chen, B., Yang, Y-T., Xie, X

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A. Kozik, M. Nowak, M. Gawlik, M. Bigaj and M. Karaś

References [1] I.Dobosz, E.Rudnik, L.Burzyńska, Codeposition of SiC particles with electrolytic nickel, Archives of Metallurgy and Materials 56, 3 (2011). [2] I. Napłoszek-Bilnik, A. Budniok, B. Łosiewicz, L. Pająk, E. Łągiewka, Electrodeposition of composite Ni-based coatings with addition of Ti and/or Al particles, The Solid Films 474, 146-153 (2005). [3] A. Wyszyńska, M. Trzaska, Kinetyka osadzania warstw kompozytowych Ni-P-Si3N4, Kompozyty 3 (2006) 8-11 [4] S. Mohajeri, A. Dolati, S