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Optical Properties of ZnO Thin Film

Appl. Phys. I 36, 6237 (1997). 12. Teng C., Muth J., Ozgur U., Bergmann M., Everitt H., Sharama A., Jin C., Narayan J., Appl. Phys. Lett. 76, 979 (2000). 13. Bai L., Xu Ch., Schunemann P., Nagashio N., Feigelson R., Giles N., J. Phys. Condens. Matter. 17, 549 (2005). 14. Zebbar N., Aida M.S., Hafdallah A., Daranfad W., Lekiket H., and Kechouane M., Materials Science Forum, 609, 133-137 (2009). 15. Chopra K.L., Thin Film Phenomena, McGraw Hill Book Company, USA, p.729 (1969). 16. Rosete

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Multifractal characteristics of titanium nitride thin films

(2015), 31. [5] CHOU W.J., YU G.P., HUANG J.H., Surf. Coat. Tech., 140 (3) (2001), 206. [6] CHOU W.J., YU G.P., HUANG J.H., Surf. Coat. Tech., 149 (2002), 7. [7] OETTEL H., WIEDEMANN R., PREIBLER S., Surf.Coat. Tech., 74 - 75 (1) (1995), 273. [8] CHENG Z., PENG H., XIE G., SHI Y., Surf. Coat. Tech., 138 (2 - 3) (2001), 237. [9] TAMURA M., KUBO H., Surf. Coat. Tech., 49 (1 - 3) (1991), 194. [10] ALMTOFT K.P., Structural characterization of nanocrystalline thin films grown by

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Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

/crystallized Ag-As-S and Ag-As-S-Se chalcogenide thin films. J. Phys. Chem. Solids, 68 (5-6), 1008-1013. DOI: 0.1016/j.jpcs.2007.03.056. Orava, J., Wagner, T., Krbal, M., Kohoutek, T., Vlcek, M., & Frumar, M. (2006). Selective wet-etching of undoped and silver photodoped amorphous thin films of chalcogenide glasses in inorganic alkaline solutions. J. Non-Cryst. Solids, 352 (9-20) 1637-1640. DOI: 10.1016/j.jnoncrysol.2005.09.041. Orava, J., Wagner, T., Krbal, M., Kohoutek, T., Vlcek, M., Klapetek, P., & Frumar, M. (2008

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Study of Copper Nitride Thin Film Structure

REFERENCES 1. Zachwieja, U., and Jacobs, H. (1990). Ammonothermalsynthese von kupfernitrid, Cu 3 N. J. Less Common Metals 161 , 175–184. DOI: 10.1016/0022-5088(90)90327-G. 2. Paniconi, G., Stoeva, Z., Doberstein, H., Smith, R. I., Gallagher, B. L., and Gregory, D.H. (2007). Structural chemistry of Cu 3 N powders obtained by ammonolysis reactions. Solid State Sci. 9 , 907–913. DOI: 10.1016/j.solidstatesciences.2007.03.017. 3. Asano, M., Umeda, K., and Tasaki, A. (1990). Cu 3 N thin film for a new light recording media. Jpn. J. Appl. Phys. 29

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(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

1 Introduction Zinc oxide (ZnO) is an n-type semiconductor with a wide direct band gap of 3.37 eV and a large exciton binding energy (60 meV). ZnO thin films have been widely applied in high technology such as optoelectronic devices, solar cells, piezoelectric transducers and gas sensors [ 1 – 7 ]. Many techniques have been utilized to prepare ZnO thin films, such as metal organic chemical vapor deposition, pulsed laser deposition, sputtering, hydrothermal, sol-gel method, etc. [ 8 – 18 ]. Due to the low cost and simple equipment, sol-gel method has been

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DWDM Transmission Based on the Thin-Film Filter Technology

-24. Ozoliņš, O., & Ivanovs, G. (2010). Evaluation of band-pass filter influence on the NRZ signal in HDWDM Systems. Electronics and Electrical Engineering, 100 (4), 65-68. Shen, W., Sun, X., Zhang, Y., Luo, Z., Liu, X., & Gu, P. (2009). Narrow band filters in both transmission and reflection with metal/dielectric thin films. Optics Communications, 282 , 242-246. Venghaus, H. (2006). Wavelength Filters in Fibre Optics. Berlin: Springer, p. 454. Sumriddetchkajorn, S., & Chaitavon, K. (2007). 1

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Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

, 99 (2016), 221. [59] Z hang Y., K appers M.J., Z hu D., O ehler F., G ao F., H umphreys C.J., Solar Energy Materials and Solar Cells , 117 (2013), 279. [60] K udrawiec R., N yk M., S yperek M., P odhorodecki A., M isiewicz J., S trek W., Applied Physics Letters , 88 (2006), 181916. [61] Y ou Y.-S., F eng S.-W., W ang H.-C., S ong J., H an J., Journal of Luminescence , 182 (2017), 196. [62] T auc J., M enth A., Journal of Non-Crystalline Solids , 8 (1972), 569. [63] S tenzel O., The physics of thin film optical

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Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

References [1] XU X., YE H., ZOU T., J. Zhejiang Univ.-Sci. A, 7 (3) (2006), 472. [2] LECLAIR P. R., PhD. Thesis: Titanium Nitride thin films by the electron shower process, Massachusetts Institute of Technology, USA, 1998. [3] BAVADI R., VALEDBAGI S., Mater. Phys. Mech., 15 (2012), 167. [4] PANKIEW A., BUNJONGPRU W., SOMWANG N., PORNTHEERAPHAT S., SOPITPAN S., NUKAEW J., HRUANUN C., POYA A., J. Micros. Soc. Thail., 24 (2) (2010), 103. [5] TAO M., UDESHI D., AGARWAL S., MALDONADO

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Effect of the structure on biological and photocatalytic activity of transparent titania thin-film coatings

1 Introduction Rapid progress in engineering of biofunctional thin-film coatings has recently been observed. It is directly related to the increase of nosocomial infections and larger impact of microorganisms on a human life. For this reason, there is a necessity to find a new method for neutralization of microorganisms. Application of coatings, e.g. based on metal oxides, which exhibit antimicrobial and antifungal activity is very attractive solution to this problem. One of the materials that could be used for this purpose is titanium dioxide due to its

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Fabrication of Cu2O Nanostructured Thin Film by Anodizing

Abstract

Cuprous oxide, a narrow bandgap p-type semiconductor, has been known as a potential material for applications in supercapacitors, hydrogen production, sensors, and energy conversion due to its properties such as non-toxicity, easy availability, cost effectiveness, high absorption coefficient in the visible region and large minority carriers diffusion length. In this study, Cu2O nanostructured thin film was fabricated by anodizing of Cu plates in ethylene glycol containing 0.15 M KOH, 0.1 M NH4F and 3 wt.% deionized water. The effects of anodizing voltage and temperature of electrolyte were investigated and reported. It was found that nanoporous Cu2O thin film was formed when anodizing voltages of 50 V and 70 V were used while a dense Cu2O thin film was formed due to the aggregation of smaller nanoparticles when 30 V anodizing voltage was used. Nanoplatelets thin film was formed when the temperature of electrolyte was reduced to 15 °C and 5 °C. X-ray diffraction confirmed the presence of Cu2O phase in thin film formed during anodizing of Cu plates, regardless of the anodizing voltage and temperature of electrolyte. Photoluminescence spectroscopy showed the presence of Cu2O peak at 630 nm corresponding to band gap of 1.97 eV. A mechanism of the formation of Cu2O thin film was proposed. This study reported the ease of tailoring Cu2O nanostructures of different morphologies using anodizing that may help widen the applications of this material

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