The nanostructured ZnO thin films were successfully synthesized by rapid thermal oxidation of metallic zinc films without catalysts or additives. On the surface of thin films the formation of ZnO nanowires was observed. In the work, the optical and electrical parameters and photoresponses of the obtained ZnO thin films were investigated. Nanostructured thin films of the type have a promising potential for the use in optoelectronics, sensor technique and biomedical sciences
The SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.