A. D. Rajapakse, A. M. Gole, and P. L. Wilson, "Approximate loss formulae for estimation of IGBT switching losses through EMTP-type simulations," presented at the 6th Int. Conf. Power System Transients, Montreal, QC, Canada, Jun. 19-23, 2005.
H. Rüedi and D. Tollik, "Development of Modular High-Power IGBT Stacks", Power Conversion Conference PCIM 2001, Nuremberg, Germany, June 2001, pp.1-6.
B.-C. Charboneau, "Double-sided liquid cooling for powersemiconductordevices
Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off states of a single IGBT transistor in operation and the acoustic signal emitted by it. Acquisition of acoustic emission signals was obtained using a specialized sensor from Vallen. To record the received signal, a high resolution digital oscilloscope was used, which exported the recorded signal to a file, which enabled further digital processing of the acquired signals. The aim of the study was to determine the usefulness of acoustic emission detection methods to determine the possibility of damage to an element based on the recorded acoustic signal.
This paper presents a new concept for a power electronic converter - the extended T-type (eT) inverter, which is a combination of a three-phase inverter and a three-level direct current (dc)/dc converter. The novel converter shows better performance than a comparable system composed of two converters: a T-type inverter and a boost converter. At first, the three-level dc/dc converter is able to boost the input voltage but also affects the neutral point potential. The operation principles of the eT inverter are explained and a simulation study of the SiC-based 6 kVA system is presented in this paper. Presented results show a serious reduction of the DC-link capacitors and the input inductor. Furthermore, suitable SiC power semiconductor devices are selected and power losses are estimated using Saber software in reference to a comparative T-type inverter. According to the simulations, the 50 kHz/6 kVA inverter feed from the low voltage (250 V) shows <2.5% of power losses in the suggested SiC metal oxide-semiconductor field-effect transistors (MOSFETs) and Schottky diodes. Finally, a 6 kVA laboratory model was designed, built and tested. Conducted measurements show that despite low capacitance (2 × 30 μF/450 V), the neutral point potential is balanced, and the observed efficiency of the inverter is around 96%.
-low resistance and inductance gate drive, Wide Bandgap Power Devices and Applications (WiPDA), IEEE Workshop, Columbus, 2013, 76-79.
 ZHANG Z., WANG F., TOLBERT L.M., BLALOCK B.J., COSTINETT D.J., Active gate driver for fast switching and cross-talk suppression of SiC devices in a phase-leg configuration, Applied Power Electronics Conference and Exposition (APEC), IEEE, Charlotte, 2015, 774-781.
 ALIGA B.J., Fundamentals of PowerSemiconductorDevices, Springer, New York, USA, 2008.
 INFINEON, Datasheet information on
Computer Engineering, 2001, pp. 375-380.
 ABRAHAM, L.-REDDIG, M. : Determination of Switching Losses in IG-BTs by Loss-Summation-Method, Proc. IEEE IAS’95, 1995, pp. 1061-1068.
 BLAABJERG, F.-PEDERSEN, J. K.-SIGURJONSSON, S. -ELKJAER, A. : An Extended Model of Power Losses in Hard-Switched IGBT-Inverters, Proc. IEEE IAS’96 , 1996, pp. 1454-1463.
 YANQUN, S.-YAN, X.-JIAN, J.-YAN, D.-XIANGNING, H.-ZHAOHUI, Z. : Switching Loss Analysis and Modeling of PowerSemiconductorDevices based on an Automatic Measurement
survey of wide bandgap powersemiconductordevices , IEEE Trans. Power Electron., 2014, 29(5), 2155–2163.
 B iela J., S chweizer M., W affler S., K olar J.W., SiC versus Si. Evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors , IEEE Trans. Ind. Electron., 2011, 58(7), 2872–2882.
 M ishra U.K., P arikh P., W u Y.-F., AlGaN/GaN HEMTs – an overview of device operation and applications , Proc. IEEE, 2002, 90(6), 1022–1031.
 B aginski T.A., T homas K.A., A robust