of ion-beam irradiation on the properties of graphite. There are many reports on electronic properties of bulk graphite. However, only few studies have been reported so far on ion-irradiated graphite, particularly temperature dependent electronic transport studies have not been performed yet because the size and geometry of the devices should be small in this type of experiments.
In this report, we investigate the temperature dependent transport properties of a thin graphite flake before and after ion-radiation. In order to irradiate the graphite flake, graphite
We report the evolution of optical absorption properties of 800 keV Ar ion irradiated NiO thin films through UV-Vis characterization. Our results indicate the existence of both Mott-Hubbard (d → d transition) and charge-transfer (p → d transition) characteristic of NiO. The optical band gap of NiO increases from 3.58 to 3.75 eV when irradiated at the fluence of 5 × 1014 ions cm-2 but it does not show any remarkable variation upon 800 keV Ar ion irradiation at higher fluences. The refractive index and electron polarizability at different ion fluences have been determined from the optical band gap. Both refractive index and electron polarizability follow an opposite trend to that of the energy gap as a function of ion fluence.
Modifications in morphological and plasmonic properties of heavily doped Ag-TiO2 nanocomposite thin films by ion irradiation have been observed. The Ag-TiO2 nanocomposite thin films were synthesized by RF co-sputtering and irradiated by 90 MeV Ni ions with different fluences. The modifications in morphological, structural and plasmonic properties of the nanocomposite thin films caused by ion irradiation were studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), and UV-Vis absorption spectroscopy. The thickness of the film and concentration of Ag were assessed by Rutheford backscattering (RBS) as ~50 nm and 56 at.%, respectively. Interestingly, localized surface plasmon resonance (LSPR) appeared at 566 nm in the thin film irradiated at the fluence of 1 × 1013 ions/cm2. This plasmonic behavior can be attributed to the increment in interparticle separation. Increased interparticle separation diminishes the plasmonic coupling between the nanoparticles and the LSPR appears in the visible region. The distribution of Ag nanoparticles obtained from HR-TEM images has been used to simulate absorption spectra and electric field distribution along Ag nanoparticles with the help of FDTD (Finite Difference Time Domain). Further, the ion irradiation results (experimental as well simulated) were compared with the annealed nanocomposite thin film and it was found that optical properties of heavily doped metal in the metal oxide matrix can be more improved by ion irradiation in comparison with thermal annealing.
the Cl-VPE grown GaN etched samples has been examined using Leitz Wetzlar metallurgical microscope. The effects of Si ionirradiation on the refractive index and on the thickness of GaN layers irradiated with different fluences were also characterized. Gaertner Research Ellipsometer L119 XUV has been used to calculate the refractive index and thickness of the Si irradiated GaN. A He–Ne laser with a wavelength of 632.8 nm has been used for the refractive index measurements. Two parameters, Δ and Ψ, were obtained in ellipsometry studies as a function of wavelength
While passing swift heavy ion through a material structure, it produces a region of radiation affected material which is known as a "latent track". Scattering motions of electrons interacting with a swift heavy ion are dominant in the latent track region. These phenomena include the electron impurity and phonon scattering processes modified by the interaction with the ion projectile as well as the Coulomb scattering between two electrons.
In this paper, we provide detailed derivation of a 3D Boltzmann scattering equation for the description of the relative scattering motion of such electrons. Phase-space distribution function for this non-equilibrioum system of scattering electrons can be found by the solution of mentioned equation.
Vitaliy P. Zhurenko, Oganes V. Kalantaryan and Sergiy I. Kononenko
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Jana Simeg Veternikova, Martin Fides, Jarmila Degmova, Stanislav Sojak, Martin Petriska and Vladimir Slugen
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