Search Results

1 - 10 of 68 items :

Clear All
Uranium and neodymium partitioning in alkali chloride melts using low-melting gallium-based alloys

, H. (2009). Separation factor of americium from cerium in molten chloride - liquid gallium reductive extraction system. Electrochemistry, 77(8), 649-651. 7. Lambertin, D., Chedhomme, S., Bourges, G., Sanchez, S., & Picard, G. S. (2005). Activity coeffi cients of plutonium and cerium in liquid gallium at 1073 K: application to a molten salt/solvent metal separation concept. J. Nucl. Mater., 341, 131-140. DOI: 10.1016/j. jnucmat.2005.01.009. 8. Novoselova, A. V., & Smolenskii, V. V. (2013). Electrochemical study of the properties of Nd

Open access
Biosorption Performance of Biodegradable Polymer Powders for the Removal of Gallium(III) ions from Aqueous Solution

LTERATURE CITED 1. Moskalyk, R.R. (2003). Gallium: the backbone of the electronics industry. Min. Eng. 16 921–929. DOI: http://dx.doi.org/10.1016/j.mineng.2003.08.003 2. Bina, G., Niti, M., Zareena, B.I. & Indu, S. (2007). Extraction and recovery of Ga(III) from waste material using Cyanex 923. Hydrometallurgy 87, 18–26. DOI: 10.1016/j.hydromet.2007.01.001. 3. Wu, C.C. & Liu, H.M. (2009). Determination of gallium in human urine by supercritical carbon dioxide extraction and graphite furnace atomic absorption spectrometry. J. Hazard. Mat

Open access
Gallium and germanium geochemistry during magmatic fractionation and post-magmatic alteration in different types of granitoids: a case study from the Bohemian Massif (Czech Republic)

peralkaline rhyolites from the Kenya Rift Valley. Mineral. Mag. 71, 703-713. Macdonald R., Rogers N.W., Baginski B. & Dzierzanowski P. 2010: Distribution of gallium between phenocrysts and melt in peralkaline salic volcanic rocks, Kenya Rift Valley. Mineral. Mag. 74, 351-363. Paktunc A.D. & Cabri L.J. 1995: A proton and electron-microprobe study of gallium, nickel and zinc distribution in chromian spinel. Lithos 35, 261-282. Raimbault L., Cuney M., Azencott C., Duthou J.L. & Joron J.L. 1995: Geochemical evidence for a

Open access
The Effects of Piezoelectricity Matrix Constants on the Charge of a Thin Membrane

. 2002 (80), 4145 - 4147 [8] I. L. Guy, S. Muensit, E. M. Goldys. Extensional piezoelectric coefficients of gallium nitride and aluminum nitride. Appl. Phys. Lett. 1999 (75), 4133 - 4135 [9] G. Bu, D. Ciplys, M. Shur, L.J. Schowalter, S. Schujman, R. Gaska, Surface acoustic waves in single crystal bulk aluminum nitride, Appl. Phys. Lett. submitted 2003 . [10] M. Edwards. Material for Robus Gallium Nitride. Additional Report. Remperature Dependent Properties of GaN. University of Bath, 2009 , 1 – 7. URL: http

Open access
Etching and ellipsometry studies on CL-VPE grown GaN epilayer

1 Introduction Group III-nitrides have been considered as a promising system for semiconductor device applications in blue and ultraviolet (UV) wavelengths and, just like their highly successful arsenic and phosphorous-based cousins, have been exploited in the infrared (IR), red and green wavelengths [ 1 , 2 ]. Currently, considerable attention has been paid to GaN-based compound semiconductors due to their potential applications in short wavelength (blue and UV) light emitting diodes (LEDs), laser diodes (LDs) and UV-photodetectors [3] . Gallium nitride

Open access
Study on Properties of Alloys with Gallium, Antimony and Zinc from Recycling

thermal diffusivity of doped and undoped GaSb by the Photothermal Deflection Technique. Phys Procedia. 2009;2(3):859-864. DOI: 10.1016/j.phpro.2009.11.036. [18] Nicols SP, Bracht H, Benamara M, Liliental-Weber Z, Haller EE. Mechanism of zinc diffusion in gallium antimonide. Phys B: Condensed Matter. 2001;308-310:854-857. DOI: 10.1016/S0921-4526(01)00913-9. [19] Zheng Q, Ye H, Tang L. Experimental investigation on the mechanism of zinc diffusion in tellurium doped gallium antimonide. Taiyangneng Xuebao/Acta Energiae Solaris Sinica. 2011

Open access
Clinical and Experimental Study of Gaalas Phototherapy for Tемрoromandibular Disorders

Summary

The objective of this study was to test the clinical effectiveness of the gallium-aluminum-arsenide laser (GaAlAs; 785 nm) and superluminiscent diodes (633 nm) phototherapy (MedX 1100 device) for the treatment of patients with temporomandibular disorders and myofascial pain syndrome. The results demonstrated a positive effect in pain relief. A significant reduction (p < 0.05) in the level of pain was observed for the temporomandibular joint and for the masseter muscles using paired samples t-test and Wilcoxon signed rank test. The experimental study on pork muscle samples showed that a) the main part of laser radiation is absorbed by the tissue in thin layer of 3-4 mm, b) in the spectral region 650-950 nm the intensity of light penetration is about 0.2-0.25 percent of the initial light intensity.

Open access
Effectiveness of Gaalas Phototherapy According to Diagnostic Criteria for Tемрoromandibular Disorders

Summary

The objective of this study was to test the clinical effectiveness of the combined gallium-aluminum-arsenide laser (GaAlAs; 785 nm) and superluminiscent diods (SLD; 633 nm) phototherapy (MedX 1100 device) for the treatment of 62 patients with 7 of the most common pain-related temporomandibular disorders with highest sensitivity and specificity according to diagnostic criteria DC/TMD. Using paired samples t-test a positive effect in the pain relief for all tested conditions was demonstrated. The most manifested and statistically significant reduction of pain was found in arthralgia attributed to osteoarthritis and systemic (rheumatoid) arthritis (p = 0.0000001), and disc displacement without reduction with limited opening (p = 0.0000002). Similar levels of pain reduction were found in arthralgia attributed to subluxation, myofascial pain with referral, local myalgia (p values vary between 0.000001 and 0.000284); the lowest values were recorded for myofascial pain (p = 0.001789) and hypermobility-related myalgia (p = 0.018443). The combined laser and SLD phototherapy can be defined as very effective treatment option particularly in pain reduction of internal derangement disorders as well as in some myogenic-related pain conditions affected by TMJ dysfunction.

Open access
Effect of Gallium Focused Ion Beam Irradiation on Properties of YBa2Cu3O x /La0.67Sr0.33MnO3 Heterostructures

Effect of Gallium Focused Ion Beam Irradiation on Properties of YBa2Cu3Ox/La0.67Sr0.33MnO3 Heterostructures

We present initial investigation of the superconductor-ferromagnet-superconductor (SFS) heterostructures of nanometer dimensions prepared by the gallium focused ion beam (FIB) technology. The SFS heterostructures were realized on the basis of high-Tc superconducting YBa2Cu3Ox and ferromagnetic La0.67Sr0.33MnO3 thin films. SFS weak link junctions require dimensions of the weak link connection in the range of nanometer size realizable by FIB patterning. On the other side the gallium focused ion beam might bring about unacceptable degradation of the superconducting as well as ferromagnetic thin film properties. The presented results show that FIB offers a suitable procedure for realization of nanometer size devices but some degradation of the ferromagnetic and superconducting properties was observed. Solution of this problem will be achieved in the next stage of our investigations.

Open access
Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Abstract

Highly conductive gallium-doped zinc oxide (GZO) transparent thin films were deposited on glass substrates by RF mag­netron sputtering. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystal­lographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400°C, which have the largest grain size (74.3 nm), the lowest electrical resistivity (1.31×10-3 Ω·cm) and the maximum figure of merit (1.46×1O-2Ω-1), exhibit the best optoelectrical properties. Furthermore, the optical proper­ties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.

Open access