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emission properties. Solid State Communications, 142(8), 425-428. 4. Yaoa, I.C., Tsengb, T.Y., & Lina, P. (2012). ZnO nanorods grown on polymer substrates as UV photodetectors. Sensors and Actuators, A: Physical, 178, 26-31. 5. Carotta, M.C., Cervi, A., di Natale, V., Gherardi, S., Giberti, A., Guidi, V., Puzzovio, D., Vendemiati, B., Martinelli, G., Sacerdoti, M., Calestani, D., Zappettini, A., Zhac, M., & Zanotti, L. (2009). ZnO gas sensors: a comparison between nanoparticles and nanotetrapods-based thick films. Sensors and Actuators, B 137, 164-169. 6. Reyes, P

its band gap energy in the range of 3.6−4.0 eV and for the organic solar cells applications due to its p-type semiconducting [ 2 ]. It can be used in transparent diodes and even in the transparent transistors caused by the best optical transmission and electrical conductivity. Moreover, NiO can be used for defrosting windows due to its good conductivity, and fabricated NiO can be used in the UV photodetectors and touch screens due to its good responsivity [ 3 , 4 ]. In the present article, we have studied and investigated a relationship to calculate the crystallite

1 Introduction Group III-nitrides have been considered as a promising system for semiconductor device applications in blue and ultraviolet (UV) wavelengths and, just like their highly successful arsenic and phosphorous-based cousins, have been exploited in the infrared (IR), red and green wavelengths [ 1 , 2 ]. Currently, considerable attention has been paid to GaN-based compound semiconductors due to their potential applications in short wavelength (blue and UV) light emitting diodes (LEDs), laser diodes (LDs) and UV-photodetectors [3] . Gallium nitride and

1. Introduction III-N semiconductor compounds have been widely known for many years as a source for fabrication of many types of microelectronic and photonic devices, such as electroluminescent, laser, microwave diodes; UV photodetectors, high power transistors [ 1 ]. III-N oxides find application in contemporary microelectronics, MOS (Metal-Oxide-Semiconductors) [ 2 – 4 ], and MIS (Metal-Insulator-Semiconductor) [ 5 , 6 ] devices for e.g. gas sensing. There are potentially many ways and means to make group III oxides [ 7 ]. The most popular are vacuum