Search Results

1 - 9 of 9 items :

  • "RF sputtering" x
Clear All
Microwave dielectric properties of BiFeO3 multiferoic films deposited on conductive layers

Abstract

Nondoped BiFeO3 (BFO) and doped Bi0.9La0.1Fe0.9Mn0.1O3 (BLFMO) thin films (d = 200–350 nm) were grown at 650–750 °C by RF sputtering on Si and SrTiO3(100), coated by conductive LaNiO3 films and La2/3Ca1/3MnO3/SrRuO3 bilayers. The complex dielectric permittivity of the films was measured at room temperature in the frequency range from 10 MHz to 10 GHz using parallel plate capacitor structures. Dielectric properties of the polycrystalline BFO films were compared with those of the epitaxial quality BLFMO films, and it was seen that the latter has better microwave performance than the former. The dielectric losses were below 0.05 at 1 GHz frequency, which may be acceptable for microwave applications.

Open access
Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

:Ti thin films prepared by RF sputtering”, European Microscopy Congress 2016: Proceedings , 2016, pp. 655–656. [16] R. Siddeswaran, P. Šutta, P. Novák, A. Hendrych and O. Životsky, “In-situ X-ray diffraction studies and magneto-optic Kerr effect on RF sputtered thin films of BaTiO 3 and Co, Nb co-doped BaTiO 3 ”, Ceramics International , vol. 42, 2016, pp. 3882–3887. [17] J. I. Langford, “Diffraction line profile analysis procedure for studying microstructure”, Proc. of the III School on X-ray Diffraction from Polycrystalline Materials , University of

Open access
Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

Abstract

The present work reports the fabrication of p-Si/SiO2 /TiO2 and p-Si/SiO2 /TiO2 /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated by I − V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal that I − V characteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. The I − V characteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO2 /TiO2 interlayer.

Open access
Young’s modulus and creep compliance of GaAs and Ga1-xMnxAs ferromagnetic thin films under thermal stress at varied manganese doping levels

Abstract

Dynamical mechanical analysis yields information about the mechanical properties of a material as a function of deforming factors, such as temperature, oscillating stress and strain amplitudes. GaAs and Mn-doped GaAs at varied levels, used in making electronic devices, suffer from damage due to changes in environmental temperatures. This is a defective factor experienced during winter and summer seasons. Hence, there was a need to establish the best amount of manganese to be doped in GaAs so as to obtain a mechanically stable spin injector material to make electronic devices. Mechanical properties of Ga1-xMnxAs spin injector were studied in relation to temperatures above room temperature (25 °C). Here, creep compliance, Young’s moduli and creep recovery for all studied samples with different manganese doping levels (MDLs) were determined using DMA 2980 Instrument from TA instruments Inc. The study was conducted using displace-recover programme on DMA creep mode with a single cantilever clamp. The samples were prepared using RF sputtering techniques. From the creep compliance study it was found that MDL of 10 % was appropriate at 30 °C and 40 °C. The data obtained can be useful to the spintronic and electronic device engineers in designing the appropriate devices to use at 30 °C and above or equal to 40 °C.

Open access
A study of properties of ZrO2 thin films deposited by magnetron sputtering under different plasma parameters: Biomedical application

. 2612–2619, 2012. [11] Z. Ji, J. Haynes, M. Ferber, J. Rigsbee, “Metastable tetragonal zirconia formation and transformation in reactively sputter deposited zirconia coatings”, Surface and Coatings Technology , vol. 135, pp. 109–117, 2001. [12] J. Park, J. K. Heo, Y.-C. Kang, “The properties of RF sputtered zirconium oxide thin films at different plasma gas ratio”, Bull Korean Chem Soc. , vol. 31, pp. 397, 2010. [13] C. Ma, F. Lapostolle, P. Briois, Q. Zhang, “Effect of O 2 gas partial pressure on structures and dielectric characteristics of rf

Open access
The influence of substrate bias voltage on the electrochemical properties of ZrN thin films deposited by radio-frequency magnetron sputtering: Biomedical application

R eferences [1] K. Izumi, D. Masanobu, H. Ariyoshi, “Properties of Zirconium Nitride Film Resistors Deposited by Reactive RF Sputtering”, Parts Hybrids Packaging PHP-11 , pp. 105, 1975. [2] D. Wu, Z. Zhang, W. Fu, X. Fan, H. Guo, “Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering”, Appl. Phys. A , vol. 64, pp. 593, 1997. [3] S. Niyomsoan, S., W. Grant, D. L. Olson, B. Mishra, “Variation of color in titanium and zirconium nitride decorative thin films”, Thin Solid Films , vol

Open access
Development of calcium titanium oxide coated silicon solar cells for enhanced voltage generation capacity

) coated glass substrates employing DC magnetron sputtering technique. It was observed that the morphology and roughness of the deposited coatings were significantly influenced by the deposition parameters. Surface roughness and surface energy were enhanced by high deposition pressure [4] . Similarly, single SiO 2 layer and double SiO 2 /TiO 2 layer of AR coatings were deposited on silicon substrates to enhance the PCE by employing RF sputtering technique. Electrical and optical characteristics of prepared specimens were examined. Lately, an improved PCE and reduced

Open access
Optical and sensing properties of Fe doped ZnO nanocrystalline thin films

films prepared by RF sputtering, spin coating and spray pyrolysis, respectively. An increase of 18 meV in optical band gap of Fe doped films prepared by sol-gel spin coating method was reported by Xu et al. [ 13 ]. Parra-Polomino et al. [ 14 ] also reported an increase, of 340 meV, in optical band gap of iron doped nanocrystals prepared by chemical route. n-type semiconducting metal oxides can also be used for gas sensing as they were able to exhibit variation in some electrical parameters, viz. resistance and capacitance of the film upon adsorption of gases. Also

Open access
Influence of zinc concentration on band gap and sub-band gap absorption on ZnO nanocrystalline thin films sol-gel grown

optoelectronics [ 1 – 4 ]. Such outstanding properties and applications of ZnO, made it popular among material researchers. Nowadays, ZnO thin films have been under extensive investigation for reliable optoelectronic device manufacturing. ZnO thin films have been grown by various methods, such as rf sputtering [5] , PLD [6] , spray pyrolysis [7] , sol-gel [8] . Sol-gel method is found to be the most suitable for the growth of ZnO thin films, as it allows fabrication of thin films with improved structural, optical and electrical properties. From physical appearance, the

Open access