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R. Skonieczny, P. Popielarski, W. Bała, K. Fabisiak, K. Paprocki, M. Jancelewicz, M. Kowalska and M. Szybowicz

approximately 3 times higher than for the spectrum recorded at cross polarization (VH). In order to determine and assess the distribution of inclination angle of molecules surface, Raman mapping measurements were performed before and after the annealing process. The procedure was conducted at temperature 473 K for 6 hours in air condition. Each map ( Fig. 2 ) covers an area of 20 μm 2 × 20 μm 2 , and consists of 121 point measurements (done every 2 μm). Using numerical procedure, each spectrum was fitted to the theoretical Lorentz curve (using Wire 3.0 inVia software) to

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L. Remache, T. Nychyporuk, N. Guermit, E. Fourmond, A. Mahdjoub and M. Lemiti

. 2 Experimental The experiments were carried out on CZ (100) p-type silicon substrates with a resistivity of 0.01 to 0.02 Ω·cm and a thickness of 250 to 300 µm. Alternatively, surface doping of standard solar cell wafers of 1 to 10 Ω·cm could be used for the same purpose. Porous silicon (PS) was grown on the front polished side in a mixture containing HF (48 %) and C 2 H 5 OH (volumetric ratio equal to 1). The electrochemical cell was made from Teflon and had a circular aperture with a diameter of 1.5 cm, on which the silicon wafer was sealed. A platinum wire