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Dong Jin Kim, Joon-Ho Oh, Han Soo Kim, Young Soo Kim, Manhee Jeong, Chang Goo Kang, Woo Jin Jo, Hyojeong Choi, Jong Guk Kim, Seung Hee Lee and Jang Ho Ha

Ω·cm), which are all eligible properties for enhanced radiation detection properties. Therefore, TlBr single crystals can be regarded as one of the most promising materials for the next-generation semiconductor radiation detection device. Acknowledgements The authors would like to gratefully acknowledge the financial support by the Nuclear R&D Program of the Ministry of Science, the ICT & Future Planning (MSIP) of South Korea (NRF-2010-0026096, NRF-2013M2A2A4023359) and by a grant from the Korea Atomic Energy Research Institute (Grant No.: 523280

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Hyojeong Choi, Han Soo Kim, Joon-Ho Oh, Dong Jin Kim, Young Soo Kim, Jong-Seo Chai and Jang Ho Ha

analysis. The authors would like to gratefully acknowledge the financial support by the Nuclear R&D Programs of the Ministry of Science, the ICT & Future Planning (MSIP) of South Korea (NRF-2010-0026096, NRF-2013M2A2A4023359), a grant from the Korea Atomic Energy Research Institute (Grant No.: 523280-15), and by the WCU (World Class University) Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education, Science and Technology (R31-2008-10029). References [1] Audet N., Guskov V.N., Greenberg J.H., J. Electron. Mater ., 34

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Nusrat Jahan, Faruque-uz-Zaman Chowdhury and A.K.M Zakaria

performed using a programmable furnace NABER (HTCT 08/16) at 1350 °C for 8 h with the temperature ramp of 5 °C/min for heating and 6 °C/min for cooling. X-ray diffraction study was carried out in order to check the phase purity and to perform structural analysis using a Philips X’Pert PRO X-ray diffractometer with CuKα radiation (λ = 1.5418 Å). The diffraction data were recorded between 15° to 65° in steps of 0.02°. The database used for the analysis of the diffraction data was X’Pert Highscore. DC resistivity was measured at room temperature by two probe method using