In an effort to synthesize doped ZnO nanowires, SiOx nanowires were obtained accidently. In the experiment, mixed powders containing chemicals such as ZnO, graphite, Ga2O3, and In2O3 were placed in the center of a tube furnace, where the temperature was set to 1200 °C and the vacuum was approximately 27 Pa. Silicon wafers were placed around the vicinity of the furnace exit to collect the expected nanomaterials. After prolonged heating, grey layers were found on top of one wafer located inside the furnace. The layer showed no adhesion to the substrate. Characterization by using Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), and Energy Dispersive X-ray Spectroscopy (EDS) revealed that this layer consisted of SiOx nanowires. Formation of Si-containing liquid drop and the subsequent growth of SiOx nanowires out of it are suggested as the growth mechanism.