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G. Chikvaidze, N. Mironova-Ulmane, A. Plaude and O. Sergeev

References 1. Pensl, G., & Choyke, W.J. (1993). Electrical and optical characterization of SiC. Physica B, 185, 264-283. 2. Cheung, R. (2006). Silicon Carbide Microelectromechanical Systems for Harsh Environments. Imperial College Press, Сh. 3, ISBN 1860946240. 3. Shenghuang Lin, Zhiming Chen, Lianbi Li, Yintu Ba, Sujuan Liu, & Mingchao Yang (2012). Investigation of micropipes in 6 H-SiC by Raman scattering. Physica, B40, 670-673. 4. Nakashima, S., & Harima, H. (1997). Raman investigation of SiC

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K. Kroics, J. Zakis, A. Suzdalenko and O. Husev

Generation Semiconductor Silicon Carbide Technology. [Online]. Available at http://www.iabrasive.com/articles/rise-of-the-3rd-generation-semiconductor-silicon-carbide-technology. [Accessed: 04-Aug-2017]. 4. Roschatt, P. M., McMahon, R. A., & Pickering, S. (2015). Investigation of dead-time behaviour in GaN DC-DC buck converter with a negative gate voltage. In 9th International Conference on Power Electronics and ECCE Asia, 1-5 June 2015 (pp. 1047-1052). Seoul, Korea. 5. Sørensen, C., Lindblad Fogsgaard, M., Christiansen, M. N., Kjeldal

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Vahid Monfared

R eferences [1] D ragon , T. L., W. D. N ix . Geometric Factors affecting the Internal Stress Distribution and High Temperature Creep Rate of Discontinuous Fiber Reinforced Metals. Acta. Metall. Mater., 38 (1990), No. 10 , 1941-1953. [2] I smar , H., F. S chröter , F. S treicher . Inelastic Behaviour of Metal-matrix Composites reinforced with Fibres of Silicon Carbide, Alumina or Carbon: a Finite-element Analysis. Compos. Sci. Technol. , 60 (2000), No. 11 , 2129-2136. [3] K im , K. J., W. R. Y u , M. S. K im . Anisotropic Creep