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Ştefan Ţălu, Sebastian Stach, Shikhgasan Ramazanov, Dinara Sobola and Guseyn Ramazanov

Abstract

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Open access

Sandra Veličković, Slavica Miladinović, Blaža Stojanović, Ružica R. Nikolić, Branislav Hadzima and Dušan Arsić

. Study Of Mechanical And Tribological Properties Ofal-6061 Reinforced With Silicon Carbide And Graphite Particles , International Journal of Technology Enhancements and Emerging Engineering Research, 3(4). R avindran , P., M anisekar , K., R athika , P., N arayanasamy , P. 2013. Tribological properties of powder metallurgy – Processed aluminium self-lubricating hybrid composites with SiC additions , Materials and Design, 45, 561–570. R adhika , N., S ubramanian , R., V enkat P rasat , S., A nandavel , B. 2012. Dry sliding wear behaviour of aluminium

Open access

S.M. Kahar, C.H. Voon, C.C. Lee, U. Hashim, M.K. Md Arshad, B.Y. Lim, S.C.B. Gopinath and W. Rahman

1 Introduction Silicon carbide (SiC) is one of the most popular ceramics used in the industry. It has unique characteristics such as high melting point, excellent oxidation resistance, high chemical inertness, high-thermal conductivity, good microwave absorbing ability, wide energy band gap and high mechanical strength enabling SiC to be used widely in aerospace structures, biomaterials and high temperature semiconducting devices [ 1 – 6 ]. SiC is produced mainly in industry by Acheson process. This process named after its inventor Edward Goodrich Acheson

Open access

Fillali Cherif, Ilyes Baba Ahmed, Abdelkader Abderrahmane and Saad Hamzaoui

lektromagnatik S.B.P.G., Malays. J. Analy. Sci. , 20 (2016), 444. [12] C lark D.E., F olz D.C., W est J.K., Mater. Sci. Eng. A-Struct. , 287 (2000), 153. [13] K im T., L ee J., L ee K.H., Carbon Lett. , 15 (2014) 15. [14] B arba A.A., A more M., Relevance of dielectric properties in microwave assisted processes , in: C ostanzo S. (Ed.), Microwave Materials Characterization , InTech, London, 2012, p. 91. [15] R ezaii N., M ai J.P., Multiphysics Modelling of a Microwave Furnace for Efficient Silicon Production , COMSOL, Munich, 2016

Open access

M. Lachowicz and W. Dudziński

Abstract

In this paper, metallographic examinations, characterising microstructural changes in the 713C superalloy subjected to remelting by GTA method, are presented. In the fusion zone, precipitation of M23C6 or M6C carbides based on chromium and molybdenum was observed. Eutectic mixtures of (γ-gg′)-MxCy type with highly developed morphology were also perceived. It was found that, in the matrix areas with non-homogeneous chemical composition, the eutectic reaction γ-γ′ can occur at the temperature close to that of the precipitation of the MxCy carbides. The presence of silicon in the carbide phases can be conducive to lowering their solidification point by creating low-melting compound NbSi. Both in the fusion zone (FZ) and in the heat-affected zone (HAZ), the secondary precipitates of the Ni3(AlTi)-γ′ phase, varying in size from 50 to 100 nm, were found. The lattice mismatch factor of the γ and γ′ particles was +0.48 % to +0.71 %, which is characteristic of the coherent precipitates of the Ni3Al phase enriched with titanium. No dislocations or stacking faults were observed in the microstructure of the FZ. In the HAZ, some primary undissolved γ′ precipitates, with a part of aluminium probably replaced with niobium were observed, which raised their melting point.

Open access

Rafal Chodun, Katarzyna Nowakowska-Langier, Sebastian Okrasa and Krzysztof Zdunek

1. Introduction Nowadays, there is a noticeable increase in the interest in aluminum nitride (AlN) in electronics and optoelectronics. This material is a very special compound which combines various sets of properties. AlN is a dielectric material with a wide direct band gap of about 6 eV [ 1 – 3 ], which stands out among the oxides, carbides and nitrides with good thermal conductivity of about 285W.m -1 .K -1 [4] . A set of properties that represent this film material makes it appropriate for a wide range of applications in the technology of

Open access

Barbara Lisiecka, Otakar Bokůvka, Tomasz Tański, Łukasz Krzemiński and Michal Jambor

ingh , M., S alem , J.A. 2002, Mechanical properties and microstructure of biomorphic silicon carbide ceramics fabricated from wood precursors , Journal of the European Ceramic Society, 22, 2709-2717. S inha , S., J halani , A., R avi , M.R., R ay , A. 2000. Modelling of pyrolysis in wood: a review , SESI Journal, 10, 41-62. T imko , M.T., W ang , J.A., B urgess , J., K racke , P., G onzalez , L., J aye , C., F isher , D. 2016, Roles of Surface Chemistry and Structural Defects of Activated Carbons in the Oxidate Desulfurization of Benzothiophens, Fuel