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Damian Bisewski, Marcin Myśliwiec, Krzysztof Górecki, Ryszard Kisiel and Janusz Zarębski

References [1] Buttay, C., Raynaud, Ch., Morel, H. (2012). Thermal Stability of Silicon Carbide Power devices. IEEE Transactions on Electron Devices, 59(3), 761−769. [2] Buttay, C., Raynaud, Ch., Morel, H., Lazar, M., Civrac, G. (2011). High-Temperature Behavior of SiC Power Devices. Proc. of 14th European Conference on Power Electronics and Applications EPE2011, 1−9. [3] Kisiel, R., Guziewicz, M., Szczepański, Z., Król, K. (2010). An Overview of Materials and Bonding Techniques for Inner Connections in SiC High

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Joanna Ćwirko, Robert Ćwirko and Janusz Mikołajczyk

-L. (2002), GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contact, Appl. Phys. Lett., 81 (4655), DOI:10.1063/1.1524035. [10] Iucolano, F, Roccaforte, F., Giannazzo, F., Raineri, V. (2008), Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts, J. Appl. Phys. 104 (093706), DOI:10.1063/1.3006133. [11] Kirschman, R. (1999), Status of Silicon Carbide (SiC) as a WideBandgap Semiconductor for High Temperature Applications: A Review, High-Temperature Electronics

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Krzysztof Górecki and Paweł Górecki

carbide semiconductor devices. Przegląd Elektrotechniczny , 87(10), 29–32. [21] Kuball, M., Pomeroy, J.W., Simms, R., Riedel, G.J., Ji, H.F., Sarua, A., Uren, M.J., Martin, T. (2007). Thermal properties and reliability of GaN microelectronics: Sub-micron spatial and nanosecond time resolution thermography. 4th IEEE Compound Semiconductor Integrated Circuit Symposium , Portland, 135–138. [22] Zarębski, J., Górecki, K. (2007). A New Measuring Method of the Thermal Resistance of Silicon P-N Diodes. IEEE Transaction on Instrumentation and Measurement , 56