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G. Chikvaidze, N. Mironova-Ulmane, A. Plaude and O. Sergeev

References 1. Pensl, G., & Choyke, W.J. (1993). Electrical and optical characterization of SiC. Physica B, 185, 264-283. 2. Cheung, R. (2006). Silicon Carbide Microelectromechanical Systems for Harsh Environments. Imperial College Press, Сh. 3, ISBN 1860946240. 3. Shenghuang Lin, Zhiming Chen, Lianbi Li, Yintu Ba, Sujuan Liu, & Mingchao Yang (2012). Investigation of micropipes in 6 H-SiC by Raman scattering. Physica, B40, 670-673. 4. Nakashima, S., & Harima, H. (1997). Raman investigation of SiC

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Jacek Rąbkowski

References [1] Bakowski M., Status and prospects of SiC power devices. IEEJ Trans. Industry Applications 126(4): 391-399 (2006). [2] Friedrichs P., Silicon carbide power semiconductors - new opportunities for high efficiency. Proc. 3rd IEEE Conference on Industrial Electronics and Applications, ICIEA 2008, pp. 1770-1774 (2008). [3] Kaminski N., State of the art and future of wide band-gap devices. Proc. of 13th European Conference on Power Electronics and Applications, EPE (2009

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A. Stojczew, K. Janerka, J. Jezierski, J. Szajnar and M. Pawlyta

-689. [9] Edalati, K., Akhlaghi, F. & Nili-Ahmadabadi, M. (2005). Influence of SiC and FeSi addition on the characteristics of gray cast iron melts poured at different temperatures. Journal of Materials Processing Technology . 160, 183-187. [10] Onsoien, M.I., Skaland, T. (2001). Preconditioning of Gray Iron Melts using Ferrosilicon or Silicon Carbide . American Foundry Society. [11] Schmidt-Szalowski, K., Szafran, M., Sentek J., Bobryk E. (2013). Chemical Technology . Warsaw: PWN. (in Polish). [12] Bielanski, A. (2010). Inorganic chemistry basics, v.2 . Warsaw

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Nisha Kondrath and Marian Kazimierczuk

References A. M. Abou-Alfotouh, A. V. Radun, H.-R. Chang, and C. Winterhalter, "A 1 MHz hard switched silicon carbide DC/DC converter," IEEE Transactions on Power Electronics , vol. 21, no. 4, pp. 880-889, July 2006. M. Bhatnagar and B. J. Baliga, "Comparison of 6H-SiC, 3C-SiC, and Si for power devices," IEEE Transactions on Electronic Devices , vol. 40, no. 3, p. 645, Mar. 1993. C. H. Carter, Jr., L. Tang, and R. F. Davis, "Growth of single crystal boules of 6H-SiC," in 4th

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Abaid ur Rehman Virk, Tanveer Abbas and Wasim Khalid

)}{\sqrt{\frac{{{d}_{u}}+{{d}_{v}}-2}{{{d}_{u}}\cdot {{d}_{v}}}}}, \\\,\,\,\,\,GAII\left( G \right)=\prod\limits_{uv\in E\left( G \right)}{\frac{2\sqrt{{{d}_{u}}\cdot {{d}_{v}}}}{{{d}_{u}}+{{d}_{v}}}}, \\G{{A}^{a}}II\left( G \right)=\prod\limits_{uv\in E\left( G \right)}{{{\left( \frac{2\sqrt{{{d}_{u}}\cdot {{d}_{v}}}}{{{d}_{u}}+{{d}_{v}}} \right)}^{\alpha }}.} \\\end{array}$$ 2 Silicon Carbide In 1891, an American scientist discover Silicon Carbide. But now a days, we can produce silicon carbide artificially by silica and carbon. Till 1929, silicon carbide was known as the hardest

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P. Chabera, A. Boczkowska, A. Morka, P. Kędzierski, T. Niezgoda, A. Oziębło and A. Witek

.A. Cheeseman, “Simulation of ballistic impact of a tungsten carbide sphere on a confined silicon carbide target”, Proc. 23rd Int., Ballistic Symp. 1, CD-ROM (2007). [11] D. Cronin, K. Bui, and C. Kaufman, “Implementation and validation of the Johnson-Holmquist ceramic material model in LS-Dyna”, Proc. 4th Eur. LS-DYNA Users Conf. 1, 47-60 (2003). [12] S. Stanisławek, A. Morka, and T. Niezgoda, “Numerical analysis of an influence of ceramic plate surrounding by metal components in a ballistic panel”, J. KONES Powertrain and Transport 18 (3

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Ştefan Ţălu, Sebastian Stach, Shikhgasan Ramazanov, Dinara Sobola and Guseyn Ramazanov

Abstract

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Open access

M. Chmielewski, K. Pietrzak, A. Strojny-Nędza, D. Jarząbek and S. Nosewicz

Abstract

This paper analyses the technological aspects of the interface formation in the copper-silicon carbide composite and its effect on the material’s microstructure and properties. Cu-SiC composites with two different volume content of ceramic reinforcement were fabricated by hot pressing (HP) and spark plasma sintering (SPS) technique. In order to protect SiC surface from its decomposition, the powder was coated with a thin tungsten layer using plasma vapour deposition (PVD) method. Microstructural analyses provided by scanning electron microscopy revealed the significant differences at metal-ceramic interface. Adhesion force and fracture strength of the interface between SiC particles and copper matrix were measured. Thermal conductivity of composites was determined using laser flash method. The obtained results are discussed with reference to changes in the area of metal-ceramic boundary.

Open access

M. Hebda, H. Dębecka, K. Miernik and J. Kazior

Abstract

The influence of adding different amounts of silicon carbide on the properties (density, transverse rupture strength, microhardness and corrosion resistance) and microstructure of low alloy steel was investigated. Samples were prepared by mechanical alloying (MA) process and sintered by spark plasma sintering (SPS) technique. After the SPS process, half of each of obtained samples was heat-treated in a vacuum furnace. The results show that the high-density materials have been achieved. Homogeneous and fine microstructure was obtained. The heat treatment that followed the SPS process resulted in an increase in the mechanical and plastic properties of samples with the addition 1wt. % of silicon carbide. The investigated compositions containing 1 wt.% of SiC had better corrosion resistance than samples with 3 wt.% of silicon carbide addition. Moreover, corrosion resistance of the samples with 1 wt.% of SiC can further be improved by applying heat treatment.

Open access

M. Hebda, S. Gadek and J. Kazior

Due to an excellent combination of toughness and strength, bainitic-austenitic dual phase steels with silicon addition have many applications in the industry. However, silicon has a high affinity to oxygen and, therefore, its introduction to the alloy is problematic during the classical sintering processes of mixing powders. Mechanical alloying (MA) offers one of the most attractive alternatives to the introduction of silicon to Astaloy CrM powders.

The aim of the present study was to determine the influence of the MA process on changes in particle size distribution, work hardening and sintering behaviour of the investigated powder mixture - Astaloy CrM powder with the addition of 2 wt.% stearic acid and 2 wt.% silicon carbide alloyed under different conditions. The practical aspect of this study was to develop and apply a common and inexpensive method of die-pressing to compact a powder mixture prepared by the MA process.