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Effect of Oxygen Doping on the Structure of TiN Surface Coatings

References [1] Makino, Y., et al., Characterization of Ti(NxOy) coatings produced by the arc ion plating method. Surface and Coatings Technology, 1998. 98(1-3): p. 934-938. [2] Chan, M.-H. and F.-H. Lu, Preparation of titanium oxynitride thin films by reactive sputtering using air/Ar mixtures. Surface and Coatings Technology, 2008. 203(5-7): p. 614-618. [3] Wu, Y., et al., Microstructure and mechanical properties of reactively sputtered Ti(O,N) coatings. International Journal of Refractory Metals and Hard

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Study Of Algorithms Of Oil Immersed Transformer Temperature Measurement Technology

Estimation of Harmonics and Interharmonics Based on Prony Algorithm., Vol. 20, 2005, No 10, 94-97. 13. Danping , Jia , Zhuo Yuan , Hongli San. The Study of Fluorescence Thermal Measurement Based on DSP. - Procedia Engineering, Vol. 29, 2012, 2864-2868. 14. Danping , Jia, Zhuo Yuan . The Application and Dynamic Temperature Test Methods of Micro Thin Film Resistor Sensor. -Advanced Materials Research, Vol. 651, 2013, 511-516. 15. Zhang , Y . , K . T . V . Grattan , A . W . Palmer . Spectral Characteristics and Effects of Heat

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Design and Implementation of a Laboratory Equipment for Studying Heat Transfer by Conduction

References [1] Bihari P.: 4. Hővezetés és hősugárzás . In: Műszaki hőtan. Edutus Főiskola, Budapest, 2012. (accessed on 10 th February 2019) [2] Kakucs A.: Műszaki hőtan . Scientia Kiadó, Kolozsvár, 2005. 150–160. [3] Dongliang Z., Xin Q., Xiaokun G.: Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials . University of Colorado, Boulder, 2017. 5–10. (accessed on 15 Juny 2018) https

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Trends Analysis of Graphene Research and Development

University of California US 1,296 University 1994–2016 26% Band structure; Electric conductivity; Raman spectra Optical instruments; Thin film transistors; Ferroelectricity Nanyang Technological University SG 890 University 2001–2016 38% Raman spectra; Nanoparticles; Surface structure Transition metal; Encapsulation; Photoluminescence Tsinghua University CN 739 University 1998–2016 44% Raman spectra; Electric conductivity; Chemical vapor deposition Pore structure; Ion transport; Dielectric films Russian Academy of

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Numerical solution of nonlinear system of integro-differential equations using Chebyshev wavelets

REFERENCES [1] M. Dehghan, F. Shakeri, Solution of an integro-differential equation arising in oscillating magnetic fields using He’s homotopy perturbation method, Prog. Electromagn. Res., 78 (2008) 361–376. [2] A. M. Siddiqui, R. Mahmood, G.K. Ghori, Homotopy perturbation method for thin film flow of a fourth grade fluid down a vertical cylinder, Phys. Lett. A, 352 (2006) 404–410. [3] K. M. Tamizhmani, J. Satsuma, B. Grammaticos, V. Ramani, Nonlinear integro differential equations as a discreet systems, Inverse Probl., 15 (1999) 787

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Homotopy Perturbation Algorithm Using Laplace Transform for Gas Dynamics Equation

and Q. K. Ghori, Thin film flow of a third grade fluid on a moving belt by He's homotopy perturbation method, International Journal of Nonlinear Sciences and Numerical Simulation, 7 (2006), 7-14. D. D. Ganji, The applications of He's homotopy perturbation method to nonlinear equation arising in heat transfer, Physics Letters A, 335 (2006), 337-341. L. Xu, He's homotopy perturbation method for a boundary layer equation in unbounded domain, Computers & Mathematics with Applications, 54 (2007), 1067

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Exploring Technology Evolution in the Solar Cell Field: An Aspect from Patent Analysis

organic materials in the production of electric devices such as electric transistors and organic thin film solar cells. Organic semiconductor structures, such as core–shell structures and nanostructures, were then presented. Based on the new structures, enhanced performance could be obtained for electric devices. Among these technology topics, Cambridge Display Technology Limited, Advanced Micro Devices, and Koninklijke Philips Electronics were popular only at the early stage, before fragmentation of the technology among rival competitors began ( Figure 1 ). Figure

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