PDMS (polydimethylsiloxane) collapse method is a simple and low cost approach for micronanochannel fabrication. However, the bonding pressure which influences the size of the final PDMS micro/nanochannels has not yet been studied. In this study, the effect of the bonding pressure on the size and maximum local stress of the PDMS micronanochannels was investigated by both experimental and numerical simulation method. The results show that when the bonding pressure is lower than 0.15 MPa the experiment results can agree well with the simulation results. The fluorescent images demonstrate that there is no blocking or leakage over the entire micro/nanochannels.
With the development of the microstructure fabrication technique, microfluidic chips are widely used in biological and medical researchers. Future advances in their commercial applications depend on the mass bonding of microfluidic chip. In this study we are presenting a simple, low cost and fast way of bonding microfluidic chips at room temperature. The influence of the bonding pressure on the deformation of the microchannel and adhesive tape was analyzed by numerical simulation. By this method, the microfluidic chip can be fully sealed at low temperature and pressure without using any equipment. The dye water and gas leakage test indicated that the microfluidic chip can be bonded without leakage or block and its bonding strength can up to 0.84 MPa.
Jingning Han, Zhifu Yin, Helin Zou, Wenqiang Wang and Jianbo Feng
Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O2 mixture contains about 5%CF4 by volume, the etching rate can be reached at 5.2 μm/min.