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  • Author: Waldemar Oleszkiewicz x
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Open access

Wojciech Kijaszek, Waldemar Oleszkiewicz and Zbigniew Znamirowski

Abstract

The authors have deposited the diamond-like carbon (DLC) films by radio frequency inductively coupled plasma enhanced chemical vapor deposition (RF ICP PECVD) method. The investigated DLC films with different sp3 fraction content were deposited on polished and textured silicon substrates. The sp3 fraction content of the deposited DLC films was ranging from 35 % to 70 % and was estimated from acquired Raman scattering spectra (excitation wavelength: 325 nm and 514.5 nm). The measurements of field emission characteristics were carried out in diode configuration. Emission properties of the DLC films were calculated from Fowler-Nordheim plots. The calculated electric field enhancement factor β was ranging from 56 to 198 for the DLC films deposited on polished substrates and from 115 to 445 for films deposited on textured substrates. The surface of the DLC films was observed by scanning electron microscope (SEM) after field emission measurements. The acquired SEM images reveled that the activation of field emission from the DLC films is connected with generation of structural damage to the DLC films.

Open access

Wojciech Kijaszek, Waldemar Oleszkiewicz, Adrian Zakrzewski, Sergiusz Patela and Marek Tłaczała

Abstract

In this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNy films. The optical constants of SiOxNy films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2%SiH4/98%N2), nitrous oxide (N2O) and nitrogen (N2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.