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  • Author: Vincenza Di Stefano x
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A hierarchy of hydrodynamic models for silicon carbide semiconductors

Abstract

The electro-thermal transport in silicon carbide semiconductors can be described by an extended hydrodynamic model, obtained by taking moments from kinetic equations, and using the Maximum Entropy Principle. By performing appropriate scaling, one can obtain reduced transport models such as the Energy transport and the drift-diffusion ones, where the transport coefficients are explicitly determined.

Open access
Wigner Monte Carlo simulation without discretization error of the tunneling rectangular barrier

Abstract

The Wigner transport equation can be solved stochastically by Monte Carlo techniques based on the theory of piecewise deterministic Markov processes. A new stochastic algorithm, without time discretization error, has been implemented and studied in the case of the quantum transport through a rectangular potential barrier.

Open access