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Mohd Anis, G.G. Muley, Mohd Shkir, S. Alfaify and H.A. Ghramh

Abstract

Present investigation is aimed to explore the single crystal growth, microhardness and third order nonlinear optical (TONLO) properties of Nd3+ doped zinc tris-thiourea sulphate (ZTS) crystal. The commercial slow solvent evaporation technique has been chosen to grow a good quality ZTS (12 mm × 0.5 mm × 0.3 mm) and Nd3+ doped ZTS (11 mm × 0.6 mm × 0.4 mm) single crystals. Vickers microhardness test has been employed to analyze the influence of Nd3+ dopant on the hardness behavior of ZTS single crystal. The TONLO effects occurring in Nd3+ doped ZTS single crystal have been evaluated by means of Z-scan technique using a He–Ne laser operating at 632.8 nm. The close and open aperture Z-scan configuration have been used to determine the nature of TONLO refraction n2 and absorption β, respectively. The magnitudes of vital TONLO parameters, such as refraction n2, absorption coefficient β, figure of merit and susceptibility χ3 of the Nd3+ doped ZTS single crystal, have been determined using Z-scan transmittance data. The n2, β, and χ3 of Nd3+ doped ZTS single crystal were found to be of the order of 10−10 cm2/W, 10−6cm/W and 10−5 esu, respectively.

Open access

I.S. Yahia, Mohd. Shkir, V. Ganesh, M.M. Abutalib, H.Y. Zahran and S. Alfaify

Abstract

Herein, we report a successful development of nano-scale pure and Al and Mn co-doped PbI2 using facile microwaveassisted route. Structural study was done through X-ray diffraction analysis of grain size, dislocation density and lattice strain. The crystallite size was found to vary from 28 nm to 40 nm due to Al:Mn co-doping in PbI2. The presence of various vibrational modes was confirmed by FT-IR spectroscopy and red shifting was observed in peak positions compared to the bulk. Surface morphology, examined using a scanning electron microscope, confirmed the formation of single crystal nanosheets of a thickness in the range of 10 nm to 30 nm. The single crystal nanosheets were found to be transformed to large area nanosheets due to the doping. Enhancement in dielectric constant from ~7.5 to 11 was observed with increasing Al doping concentration. Linear attenuation coefficient was calculated and showed the enhancement of blocking gamma rays with increasing doping concentration. Its value was found to increase from 7.5 to 12.8 with the doping. The results suggest that the synthesized nanostructures can be used for detection and absorption of gamma rays emitted by 137Cs and 241Am sources.