Search Results

You are looking at 1 - 3 of 3 items for

  • Author: Pavol Nemec x
Clear All Modify Search
Open access

Pavol Hronec, Jaroslava Škriniarová, Anna Benčurová, Pavol Nemec, Dušan Pudiš and Jaroslav Kováč

Abstract

The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1%. Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2%. We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned

Open access

Ivan Hotovy, Ivan Kostic, Martin Predanocy, Pavol Nemec and Vlastimil Rehacek

Abstract

Patterning of metal oxide nanostructures with different shapes and well-defined size may play an important role in the improvement of MEMS systems, sensors and optical devices. We investigated the effects of HSQ e-beam resist processing on the fabrication of sputtered TiO2 nanostructures. They were patterned using direct write e-beam lithography combined with ICP-RIE etching in CF4/Ar plasma. Experimental results confirmed that the HSQ resist with a thickness of about 600 nm is suitable as a masking material for optimal etching process and allows patterning of the dots array in TiO2 sputtered films with a thickness up 150 nm. TiO2 arrays with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

Open access

Robert Andok, Anna Benčurová, Pavol Nemec, Anna Konečníková, Ladislav Matay, Jaroslava Škriniarová and Pavol Hrkút

Abstract

In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N2 plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.