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A. Strojny-Nędza, K. Pietrzak, M. Teodorczyk, M. Basista, W. Węglewski and M. Chmielewski


This paper describes the process of obtaining Cu-SiC-Cu systems by way of spark plasma sintering. A monocrystalline form of silicon carbide (6H-SiC type) was applied in the experiment. Additionally, silicon carbide samples were covered with a layer of tungsten and molybdenum using chemical vapour deposition (CVD) technique. Microstructural examinations and thermal properties measurements were performed. A special attention was put to the metal-ceramic interface. During annealing at a high temperature, copper reacts with silicon carbide. To prevent the decomposition of silicon carbide two types of coating (tungsten and molybdenum) were applied. The effect of covering SiC with the aforementioned elements on the composite’s thermal conductivity was analyzed. Results were compared with the numerical modelling of heat transfer in Cu-SiC-Cu systems. Certain possible reasons behind differences in measurements and modelling results were discussed.