Search Results

1 - 2 of 2 items

  • Author: L’ubica Stuchlíková x
Clear All Modify Search
Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

Abstract

The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Open access
DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell

Abstract

In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap levels ET1=0.77 eV, ET2=0.47 eV, ET3=0.64 eV, HT1=0.62 eV and HT2=0.53 eV were identified with reliable accuracy. These values were obtained by available analytical procedures, verified by simulations and confirmed by reference structures with basic layer types and compared with possible reference trap data. Native structural defects in GaAs were stated as the origin of these deep energy levels

Open access