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Anna Kamińska, Ryszard Diduszko, Sławomir Krawczyk, Elżbieta Czerwosz and Kamil Sobczak

Abstract

In this paper we present the results of the investigations of nanostructured C-Pd films for hydrogen sensing applications. These C-Pd films were prepared by physical vapor deposition and then annealed in an argon flow at the temperature of 500°C. The structure and morphology of the prepared C-Pd films were investigated using transmission electron microscopy and energy dispersive X-ray spectroscopy. We studied the infiuence of hydrogen on the electrical properties and crystal structure of C-Pd films. It was shown that film resistance changes depended on hydrogen concentration. At lower hydrogen concentration (up to 2 vol.%), the films response increased proportionally to [H2], while above 2 vol.% H2, it was almost constant. This is connected with the formation of a solid solution of hydrogen in palladium at lower H2 concentration and the creation of palladium hydride at higher H2 concentration. X-ray diffraction was used to confirm the formation of Pd-H solid solution and palladium hydride.

Open access

Izabela Stępinska, Mirosław Kozłowski, Joanna Radomska, Halina Wronka, Elżbieta Czerwosz and Kamil Sobczak

Abstract

In this paper various types of films made of carbon nanotubes (CNTs) are presented. These films were prepared on different substrates (Al2O3, Si n-type) by the two-step method. The two-step method consists of physical vapor deposition step, followed by chemical vapor deposition step (PVD/CVD). Parameters of PVD process were the same for all initial films, while the duration times of the second step - the CVD process, were different (15, 30 min.). Prepared films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and field emission (FE) measurements. The I-E and F-N characteristics of electron emission were discussed in terms of various forms of CNT films. The value of threshold electric field ranged from few V/μm (for CNT dispersed rarely on the surface of the film deposited on Si) up to ~20 V/μm (for Al2O3 substrate).