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Vimal Kumar Pathak, Chitresh Nayak, Amit Kumar Singh and Himanshu Chaudhary

Abstract

Computer-aided tools help in shortening and eradicating numerous repetitive tasks that reduces the gap between digital model and actual product. Use of these tools assists in realizing free-form objects such as custom fit products as described by a stringent interaction with the human body. Development of such a model presents a challenging situation for reverse engineering (RE) which is not analogous with the requirement for generating simple geometric models. Hence, an alternating way of producing more accurate three-dimensional models is proposed. For creating accurate 3D models, point clouds are processed through filtering, segmentation, mesh smoothing and surface generation. These processes help in converting the initial unorganized point data into a 3D digital model and simultaneously influence the quality of model. This study provides an optimum balance for the best accuracy obtainable with maximum allowable deviation to lessen computer handling and processing time. A realistic non trivial case study of free-form prosthetic socket is considered. The accuracy obtained for the developed model is acceptable for the use in medical applications and FEM analysis.

Open access

Neeraj K. Mishra, Chaitnaya Kumar, Amit Kumar, Manish Kumar, Pratibha Chaudhary and Rajeev Singh

Abstract

A nanocomposite of 0.5SnO2–0.5Al2O3 has been synthesized using a sol-gel route. Structural and optical properties of the nanocomposite have been discussed in detail. Powder X-ray diffraction and scanning electron microscopy with energy-dispersive X-ray diffraction spectroscopy confirm the phase purity and the particle size of the 0.5SnO2–0.5Al2O3 nanocomposite (13 to 15 nm). The scanning electron microscopy also confirms the porosity in the sample, useful in sensing applications. The FT-IR analysis confirms the presence of physical interaction between SnO2 and Al2O3 due to the slight shifting and broadening of characteristic bands. The UV-Vis analysis confirms the semiconducting nature because of direct transition of electrons into the 0.5SnO2–0.5Al2O3 nanocomposites.