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M. Adamczyk, J. Kusz, W. Hofmeister, M. Zubko, L. Kozielski, M. Pilch, D. Bochenek and B. Wodecka-Duś

Abstract

The subject of the paper is lead free bismuth layer structure oxides (1-x)Bi3TiNbO9-xBaBi2Nb2O9 (x=0; 1; 2; 3 mol). The influence of Bi3TiNbO9/BaBi2Nb2O9 ratio on dielectric and structural properties was studied in a wide range of temperatures. Change in the ratio causes a decrease in the maximum value of dielectric permittivity and shifts the temperature of ε’max to low values, leading to linear decreasing of average grain size and linear increasing of ceramics density. These results indicate an augment of the packing degree and the participation of pores are significantly decreased with the increase of BaBi2Nb2O9 compound intake. Moreover, for 0.7Bi3TiNbO9-0.3BaBi2Nb2O9 ceramics the dielectric phase transition is broadened and the properties characteristic for the ferroelectric relaxor appear.