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SHI irradiation induced modifications of plasmonic properties of Ag-TiO2 thin film and study using FDTD simulation

Abstract

Modifications in morphological and plasmonic properties of heavily doped Ag-TiO2 nanocomposite thin films by ion irradiation have been observed. The Ag-TiO2 nanocomposite thin films were synthesized by RF co-sputtering and irradiated by 90 MeV Ni ions with different fluences. The modifications in morphological, structural and plasmonic properties of the nanocomposite thin films caused by ion irradiation were studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), and UV-Vis absorption spectroscopy. The thickness of the film and concentration of Ag were assessed by Rutheford backscattering (RBS) as ~50 nm and 56 at.%, respectively. Interestingly, localized surface plasmon resonance (LSPR) appeared at 566 nm in the thin film irradiated at the fluence of 1 × 1013 ions/cm2. This plasmonic behavior can be attributed to the increment in interparticle separation. Increased interparticle separation diminishes the plasmonic coupling between the nanoparticles and the LSPR appears in the visible region. The distribution of Ag nanoparticles obtained from HR-TEM images has been used to simulate absorption spectra and electric field distribution along Ag nanoparticles with the help of FDTD (Finite Difference Time Domain). Further, the ion irradiation results (experimental as well simulated) were compared with the annealed nanocomposite thin film and it was found that optical properties of heavily doped metal in the metal oxide matrix can be more improved by ion irradiation in comparison with thermal annealing.

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Structural and surface analysis of chemical vapor deposited boron doped aluminum nitride thin film on aluminum substrates

Abstract

Chemical vapor deposition (CVD) process was conducted for synthesis of boron (B) doped aluminum nitride (B-AlN) thin films on aluminum (Al) substrates. To prevent melting of the Al substrates, film deposition was carried out at 500 °C using tert-buthylamine (tBuNH2) solution delivered through a bubbler as a nitrogen source instead of ammonia gas (NH3). B-AlN thin films were prepared from three precursors at changing process parameters (gas mixture ratio). X-ray diffraction (XRD) technique and atomic force microscope (AFM) were used to investigate the structural and surface properties of B-AlN thin films on Al substrates. The prepared thin films were polycrystalline and composed of mixed phases {cubic (1 1 1) and hexagonal (1 0 0)} of AlN and BN with different orientations. Intensive AlN peak of high intensity was observed for the film deposited at a flow rate of the total gas mixture of 25 sccm. As the total gas mixture flow decreased from 60 sccm to 25 sccm, the crystallite size of AlN phase increased and the dislocation density decreased. Reduced surface roughness (10.4 nm) was detected by AFM for B-AlN thin film deposited on Al substrate using the lowest flow rate (25 sccm) of the total gas mixture.

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Structural, morphological, optical and diode properties of chemical bath deposited nano-structured CdS thin films using EDTA as a complexing agent

Abstract

CdS thin films with (1 1 1) orientation were prepared by chemical bath deposition technique at 80±5 °C using the reaction between NH4OH, CdCl2 and CS(NH2)2. The influence of annealing temperature varying from 150 °C to 250 °C was studied. X-ray diffraction studies revealed that the films are polycrystalline in nature with cubic structure. Various parameters, such as dislocation density, stress and strain, were also evaluated. SEM analysis indicated uniformly distributed nano-structured spherically shaped grains and net like morphology. Optical transmittance study showed the wide transmittance band and absence of absorption in the entire visible region. I-V characterization of p-Si/n-CdS diode and photoluminescence studies were also carried out for the CdS films.

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Synthesis, growth and characterization of semiorganic nonlinear optical single crystal bis(thiourea) barium nitrate (BTBN) for frequency conversion

Abstract

A novel semiorganic nonlinear optical (NLO) crystal, bis(thiourea) barium nitrate (BTBN) was synthesized and grown by slow evaporation method. Structure of the new crystalline compound was confirmed by single crystal X-ray diffraction analysis and it showed that BTBN belongs to orthorhombic crystal system. The crystalline nature of the BTBN was confirmed by powder X-ray diffraction study. Important functional groups of BTBN were identified by FT-IR spectroscopic analysis. UV-Vis-NIR spectral study showed that the grown crystal is transparent in the entire visible region with low cut off wavelength of 304 nm. BTBN exhibits a SHG efficiency which is nearly 2.38 times higher than that of KDP. The BTBN crystal has high mechanical strength and belongs to soft category, which was confirmed by micorhardness study. The thermal stability of BTBN was determined from TGA and DTA thermal study which revealed that the BTBN crystal has thermal stability up to 243.1 °C. The surface properties and presence of elements was analyzed by SEM and EDAX study, respectively.

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DFT study of optoelectronic spectra of barium cadmium chalcogenides (Ba2CdX3,X = S, Se and Te)

Abstract

DFT analyses of electronic and optical spectra of barium cadmium chalcogenides (Ba2CdX3, X =S, Se, Te) have been carried out. The study of electronic spectra has been made in terms of band structure and density of states using full potential linear augmented plane wave plus local orbital method. Band structure calculations have been carried out under the approximations PBE-GGA, PBE-Sol, LDA and TB-mBJ. Band structures of these materials show that Ba2CdS3, Ba2CdSe3 and Ba2CdTe3 crystals possess a band gap less than 1 eV, underestimated relative to the experimental/theoretical literature values. Optical spectra of these chalcogenides have been analyzed in terms of real and imaginary parts of dielectric function, reflectivity, refractive index, extinction coefficient, absorption coefficient, optical conductivity and electron energy loss. Optical results show large anisotropy along different directions. These results provide a physical basis of barium cadmium chalcogenides for potential application in optoelectronic devices.

Open access
Effect of the electrodeposition potential on the magnetic properties of FeCoNi films

Abstract

The effect of electrodeposition potential on the magnetic properties of the FeCoNi films has been reported in this paper. The FeCoNi electrodeposition was carried out from sulfate solution using potentiostatic technique. The obtained FeCoNi films were characterized by X-ray diffractometer (XRD), atomic absorption spectrometer (AAS) and vibrating sample magnetometer (VSM). It has been shown that the electrodeposition potential applied during the synthesis process determines the magnetic characteristics of FeCoNi films. The more negative potential is applied, the higher Ni content is in the FeCoNi alloy. At the same time, Co and Fe showed almost similar trend in which the content decreased with an increase in applied potential. The mean crystallite size of FeCoNi films was ranging from 11 nm to 15 nm. VSM evaluation indicated that the FeCoNi film is a ferromagnetic alloy with magnetic anisotropy. The high saturation magnetization of FeCoNi film was ranging from 86 A·m2/kg to 105 A·m2/kg. The film is a soft magnetic material which was revealed by a very low coercivity value in the range of 1.3 kA/m to 3.7 kA/m. Both the saturation magnetization and coercivity values decreased at a more negative electrodeposition potential.

Open access
Effects of Al doping on defect behaviors of ZnO thin film as a photocatalyst

Abstract

Al doped ZnO (AZO) thin films were prepared on silica substrates by sol-gel method. The films showed a hexagonal wurtzite structure with a preferred orientation along c-axis. Suitable Al doping dramatically improved the crystal quality compared to the undoped ZnO films. Dependent on the Al dopant concentration, the diffraction peak of (0 0 2) plane in XRD spectra showed at first right-shifting and then left-shifting, which was attributed to the change in defect concentration induced by the Al dopant. Photocatalytic properties of the AZO film were characterized by degradation of methyl orange (MO) under simulated solar light. The transmittance of the films was enhanced by the Al doping, and the maximum transmittance of 80 % in the visible region was observed in the sample with Al concentration of 1.5 at.% (mole fraction). The film with 1.5 at.% Al doping achieved also maximum photocatalytic activity of 68.6 % under solar light. The changes in the film parameters can be attributed to the variation in defect concentration induced by different Al doping content.

Open access
Preparation and characterization of cobalt and copper oxide nanocrystals

Abstract

Copper oxide and cobalt oxide (Co3O4, CuO) nanocrystals (NCs) have been successfully prepared using microwave irradiation. The obtained powders of the nanocrystals (NCs) were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermogravimetric (TGA) analysis and Fourier-transform infrared spectroscopy. The obtained results confirm the presence of both nanooxides which have been produced during chemical precipitation using microwave irradiation. TEM micrographs have shown that the obtained nanocrystals are characterized by high dispersion and narrow size distribution. The results of X-ray diffraction confirmed those obtained from the transmission electron microscope. Optical absorption analysis indicated the direct band gap for both kinds of the nanocrystals.

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Structural analysis and dielectric relaxation mechanism of conducting polymer/volcanic basalt rock composites

Abstract

In this work, polypyrrole and polythiophene conducting polymers (CPs) have been synthesized and doped with volcanic basalt rock (VBR) in order to improve their dielectric properties for technological applications. The structure and morphology of the composites with different VBR doping concentrations were characterized by FT-IR and SEM analyses. The best charge storage ability was achieved for maximum VBR doping concentration (50.0 wt.%) for both CPs. Dielectric relaxation types of the composites were determined as non-Debye type due to non-zero absorption coefficient and observation of semicircles whose centers were below Z′ axis at the Nyquist plots. It was also ascertained that VBR doping makes the molecular orientation easier than for non-doped samples and reduced energy requirement of molecular orientation. In addition, AC conductivity was totally masked by DC conductivity for all samples at low frequency.

Open access
Tapered fiber sensor in the near infrared wavelength

Abstract

Simulated transmission spectra for tapered fibers with no taper, one taper and two tapers in the near infrared wavelength range, calculated by Finite-Difference-Time-Domain method are currently presented. Transmission peak positions tend to shift to the shorter wavelength when the taper deformation is added to the fiber or the taper width gets narrower. The thickness sensitivity for the tapered structures with different taper thicknesses is about 2.28e-3 nm·μm−1. There is an interference structure in the electric field distribution images, which reveals in the fiber structures. The transmission spectra for the fiber without taper, one taper and two-tapered structures were simulated in near infrared wavelength by FDTD. The transmission spectra for tlated in near infrared wavelength by FDTD. The sensitivity of the fiber was about 50 nm × RIU−1 and it had better refractive index detection. The tapered fiber can be applied to the bio-chemical sensors and physical deformation testing.

Open access