Renata Nováková, Jana Šujanová and Natália Nováková
The National Quality Programme of the Slovak Republic for 2017-2021 strongly emphasises the primary objectives and priorities of the Quality Improvement Strategy. This should be one of the main priorities of the Slovak Government in the upcoming period. The Quality Improvement Strategy should, in general, lead to an improvement in the quality of life. The aim of the paper is to point out the opportunities for improvement by applying indicators aimed at defining the excellence of organisations within the national economy of the Slovak Republic.
The construction industry in India is the second most important contributor to its gross domestic product. However, high rate of accidents and fatalities have tarnished the image of industry in India. Although the industry contributes significantly to the Indian economy, safety management is the primary concern alongside with frequent workplace accidents. The role of safety management is vital to improve safety performance of an organization. The functions of safety management include planning, organizing, staffing, directing, controlling and coordinating safety activities with an aim to minimize accidents/injuries. Safety trainings, employee participation, compliance of safety procedures and motivational schemes are part of safety management which influences the overall safety performance. Several metrics were developed to measure the safety performance of an organization but not a single measure will reflect the overall performance. The present study considered parameters pertaining to the safety management which have influence on the safety performance of a construction organization in India. The parameters are analyzed by formulating a goal programming model. The results of the study suggests that much improvement is needed in the area of safety trainings and the revised targets were established.
A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima and Z. Benamara
In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified
relation has been extracted from (I-V) characteristics, where the values of ΦB0 and
have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.
In this paper, Cd0.3Zn0.7S thin film has been electrodeposited from aqueous bath containing CdSO4, ZnSO4, Na2S2O3 and EDTA, having pH ~ 14. The structural, optical, morphological, surface wettability and photoluminescence properties of the film were investigated. The XRD pattern showed that the film consisted of mixed phases of CdS and ZnS with polycrystalline structure. The bandgap of the film was evaluated as 2.69 eV. The AFM study revealed that the Cd0.3Zn0.7S thin film contained spherical grains with root mean square roughness of 6.09 nm. The water contact angle measurement showed that the thin film was hydrophilic in nature. Moreover, the PL study revealed that the excitation wavelength was 460 nm.
Presented paper concentrate on problems connected with the role of operation manager within industrial company. Operation management concentrate many activities in today’s industrial corporation and because of that the role of it’s manager is very important. He should to have many skills described in this paper. We analysed responsibilities of the operation manager, his basic operational skills and also give some examples of duties and responsibilities of good operation manager on the example of food industry. This example can give some remarks about practical skills needed in operation management in particular enterprise.
The present work reports on the optimization of substrate temperature, molar concentration and volume of the solution of nickel oxide (NiO) thin films prepared by nebulizer spray pyrolysis (NSP) technique. NiO films were optimized and characterized by XRD, SEM, EDX, UV-Vis and I-V measurements. Based on XRD analysis, the molar concentration, volume of solution and substrate temperature of the prepared NiO films were optimized as 0.20 M, 5 mL and 450 °C for P-N diode applications. The XRD pattern of the optimized NiO film revealed cubic structure. The surface morphological variations and elemental composition were confirmed by SEM and EDX analysis. The optical properties were studied with UV-Vis spectrophotometer and the minimum band gap value was 3.67 eV for 450 °C substrate temperature. Using J-V characteristics, the diode parameters: ideality factor n and barrier height Φb values of p-NiO/N-Si diode prepared at optimum conditions, i.e. 450 °C, 0.2 M, 5 mL, were evaluated in dark and under illumination.
J. Górka, M. Przybyła, M. Szmul, A. Chudzio and D. Ładak
The article presents problems accompanying the industrial TIG welding (142) of a heat exchanger perforated bottom made of steel clad with titanium B265 grade 1 with tubes made of titanium B338 grade 2. Research-related tests involved the making of test plates containing simulated imperfections formed during orbital welding. The above-named imperfections resulted from insufficient gas shielding during the welding process, the improper positioning of the tungsten electrode (excessively large or overly small circumference, around which the orbital welding process was performed), an excessive electrode travel rate being the consequence of an improperly set welding programme as well as excessively high welding current. Initial tests enabled the development of the orbital TIG welding of titanium tubes with the perforated bottom made of titanium-clad steel, satisfying acceptance criteria applied during commissioning.
Copper oxide and cobalt oxide (Co3O4, CuO) nanocrystals (NCs) have been successfully prepared using microwave irradiation. The obtained powders of the nanocrystals (NCs) were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermogravimetric (TGA) analysis and Fourier-transform infrared spectroscopy. The obtained results confirm the presence of both nanooxides which have been produced during chemical precipitation using microwave irradiation. TEM micrographs have shown that the obtained nanocrystals are characterized by high dispersion and narrow size distribution. The results of X-ray diffraction confirmed those obtained from the transmission electron microscope. Optical absorption analysis indicated the direct band gap for both kinds of the nanocrystals.
The paper concentrates on the issues of applying smart technologies in the manufacturing processes. The author includes in it brief descriptions of the smart technologies that contributed to the emergence of Industry 4.0 concept. Additionally, based on reports and surveys conducted on a global scale regarding the application of intelligent technologies, the author analyses the current state of implementing these technologies in manufacturing processes and provides forecasts regarding the adoption of the solutions based on Artificial Intelligence in global enterprises in the near future.
GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.