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Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Abstract

GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

Open access
Synthesis and characterization of binary and ternary nanocomposites based on TiO2, SiO2 and ZnO with PVA based template-free gel combustion method

Abstract

Binary and ternary nanocomposites based on TiO2, SiO2 and ZnO were synthesized by PVA-based template-free gel combustion method. The morphology and the particles sizes of the synthesized samples depended on some parameters including the initial concentrations of metal salts and PVA amount in the sol, solvent composition and solution pH. Effects of these parameters were investigated and optimized by using the Taguchi method. In the experimental design, the Taguchi L25 array was used to investigate six factors at five levels. The samples were characterized by dynamic light scattering (DLS), transmission electron microscopy (TEM), Brunauer-Emmett-Teller (BET) specific surface areas, scanning electron microscopy (SEM). The obtained results showed that the present method can be used to synthesize TiO2/SiO2/ZnO ternary nanocomposite with an effective surface area of 0.3 m2 · g−1 and ZnO/TiO2, TiO2/SiO2, ZnO/SiO2 binary nanocomposites with an effective surface area of 234 m2 · g−1, 6 m2 · g−1 and 0.5 m2 · g−1, respectively. The ZnO/TiO2 nanocomposite which was synthesized under the following experimental conditions: 2.5 wt.% Zn salt, 2.5 wt.% Ti salt, 2.0 wt.% PVA, pH = 1 and ethanol:water ratio 30:70 was selected by the Taguchi method as an optimum sample with the smallest particles (average diameter = 50 nm).

Open access
Optimization and characterization of NiO thin films prepared via NSP technique and its P-N junction diode application

Abstract

The present work reports on the optimization of substrate temperature, molar concentration and volume of the solution of nickel oxide (NiO) thin films prepared by nebulizer spray pyrolysis (NSP) technique. NiO films were optimized and characterized by XRD, SEM, EDX, UV-Vis and I-V measurements. Based on XRD analysis, the molar concentration, volume of solution and substrate temperature of the prepared NiO films were optimized as 0.20 M, 5 mL and 450 °C for P-N diode applications. The XRD pattern of the optimized NiO film revealed cubic structure. The surface morphological variations and elemental composition were confirmed by SEM and EDX analysis. The optical properties were studied with UV-Vis spectrophotometer and the minimum band gap value was 3.67 eV for 450 °C substrate temperature. Using J-V characteristics, the diode parameters: ideality factor n and barrier height Φb values of p-NiO/N-Si diode prepared at optimum conditions, i.e. 450 °C, 0.2 M, 5 mL, were evaluated in dark and under illumination.

Open access
SHI irradiation induced modifications of plasmonic properties of Ag-TiO2 thin film and study using FDTD simulation

Abstract

Modifications in morphological and plasmonic properties of heavily doped Ag-TiO2 nanocomposite thin films by ion irradiation have been observed. The Ag-TiO2 nanocomposite thin films were synthesized by RF co-sputtering and irradiated by 90 MeV Ni ions with different fluences. The modifications in morphological, structural and plasmonic properties of the nanocomposite thin films caused by ion irradiation were studied by transmission electron microscopy (TEM), X-ray diffraction (XRD), and UV-Vis absorption spectroscopy. The thickness of the film and concentration of Ag were assessed by Rutheford backscattering (RBS) as ~50 nm and 56 at.%, respectively. Interestingly, localized surface plasmon resonance (LSPR) appeared at 566 nm in the thin film irradiated at the fluence of 1 × 1013 ions/cm2. This plasmonic behavior can be attributed to the increment in interparticle separation. Increased interparticle separation diminishes the plasmonic coupling between the nanoparticles and the LSPR appears in the visible region. The distribution of Ag nanoparticles obtained from HR-TEM images has been used to simulate absorption spectra and electric field distribution along Ag nanoparticles with the help of FDTD (Finite Difference Time Domain). Further, the ion irradiation results (experimental as well simulated) were compared with the annealed nanocomposite thin film and it was found that optical properties of heavily doped metal in the metal oxide matrix can be more improved by ion irradiation in comparison with thermal annealing.

Open access
Structural and surface analysis of chemical vapor deposited boron doped aluminum nitride thin film on aluminum substrates

Abstract

Chemical vapor deposition (CVD) process was conducted for synthesis of boron (B) doped aluminum nitride (B-AlN) thin films on aluminum (Al) substrates. To prevent melting of the Al substrates, film deposition was carried out at 500 °C using tert-buthylamine (tBuNH2) solution delivered through a bubbler as a nitrogen source instead of ammonia gas (NH3). B-AlN thin films were prepared from three precursors at changing process parameters (gas mixture ratio). X-ray diffraction (XRD) technique and atomic force microscope (AFM) were used to investigate the structural and surface properties of B-AlN thin films on Al substrates. The prepared thin films were polycrystalline and composed of mixed phases {cubic (1 1 1) and hexagonal (1 0 0)} of AlN and BN with different orientations. Intensive AlN peak of high intensity was observed for the film deposited at a flow rate of the total gas mixture of 25 sccm. As the total gas mixture flow decreased from 60 sccm to 25 sccm, the crystallite size of AlN phase increased and the dislocation density decreased. Reduced surface roughness (10.4 nm) was detected by AFM for B-AlN thin film deposited on Al substrate using the lowest flow rate (25 sccm) of the total gas mixture.

Open access
Structural, morphological, optical and diode properties of chemical bath deposited nano-structured CdS thin films using EDTA as a complexing agent

Abstract

CdS thin films with (1 1 1) orientation were prepared by chemical bath deposition technique at 80±5 °C using the reaction between NH4OH, CdCl2 and CS(NH2)2. The influence of annealing temperature varying from 150 °C to 250 °C was studied. X-ray diffraction studies revealed that the films are polycrystalline in nature with cubic structure. Various parameters, such as dislocation density, stress and strain, were also evaluated. SEM analysis indicated uniformly distributed nano-structured spherically shaped grains and net like morphology. Optical transmittance study showed the wide transmittance band and absence of absorption in the entire visible region. I-V characterization of p-Si/n-CdS diode and photoluminescence studies were also carried out for the CdS films.

Open access
Synthesis, growth and characterization of semiorganic nonlinear optical single crystal bis(thiourea) barium nitrate (BTBN) for frequency conversion

Abstract

A novel semiorganic nonlinear optical (NLO) crystal, bis(thiourea) barium nitrate (BTBN) was synthesized and grown by slow evaporation method. Structure of the new crystalline compound was confirmed by single crystal X-ray diffraction analysis and it showed that BTBN belongs to orthorhombic crystal system. The crystalline nature of the BTBN was confirmed by powder X-ray diffraction study. Important functional groups of BTBN were identified by FT-IR spectroscopic analysis. UV-Vis-NIR spectral study showed that the grown crystal is transparent in the entire visible region with low cut off wavelength of 304 nm. BTBN exhibits a SHG efficiency which is nearly 2.38 times higher than that of KDP. The BTBN crystal has high mechanical strength and belongs to soft category, which was confirmed by micorhardness study. The thermal stability of BTBN was determined from TGA and DTA thermal study which revealed that the BTBN crystal has thermal stability up to 243.1 °C. The surface properties and presence of elements was analyzed by SEM and EDAX study, respectively.

Open access
DFT study of optoelectronic spectra of barium cadmium chalcogenides (Ba2CdX3,X = S, Se and Te)

Abstract

DFT analyses of electronic and optical spectra of barium cadmium chalcogenides (Ba2CdX3, X =S, Se, Te) have been carried out. The study of electronic spectra has been made in terms of band structure and density of states using full potential linear augmented plane wave plus local orbital method. Band structure calculations have been carried out under the approximations PBE-GGA, PBE-Sol, LDA and TB-mBJ. Band structures of these materials show that Ba2CdS3, Ba2CdSe3 and Ba2CdTe3 crystals possess a band gap less than 1 eV, underestimated relative to the experimental/theoretical literature values. Optical spectra of these chalcogenides have been analyzed in terms of real and imaginary parts of dielectric function, reflectivity, refractive index, extinction coefficient, absorption coefficient, optical conductivity and electron energy loss. Optical results show large anisotropy along different directions. These results provide a physical basis of barium cadmium chalcogenides for potential application in optoelectronic devices.

Open access
Effect of the electrodeposition potential on the magnetic properties of FeCoNi films

Abstract

The effect of electrodeposition potential on the magnetic properties of the FeCoNi films has been reported in this paper. The FeCoNi electrodeposition was carried out from sulfate solution using potentiostatic technique. The obtained FeCoNi films were characterized by X-ray diffractometer (XRD), atomic absorption spectrometer (AAS) and vibrating sample magnetometer (VSM). It has been shown that the electrodeposition potential applied during the synthesis process determines the magnetic characteristics of FeCoNi films. The more negative potential is applied, the higher Ni content is in the FeCoNi alloy. At the same time, Co and Fe showed almost similar trend in which the content decreased with an increase in applied potential. The mean crystallite size of FeCoNi films was ranging from 11 nm to 15 nm. VSM evaluation indicated that the FeCoNi film is a ferromagnetic alloy with magnetic anisotropy. The high saturation magnetization of FeCoNi film was ranging from 86 A·m2/kg to 105 A·m2/kg. The film is a soft magnetic material which was revealed by a very low coercivity value in the range of 1.3 kA/m to 3.7 kA/m. Both the saturation magnetization and coercivity values decreased at a more negative electrodeposition potential.

Open access
Effects of Al doping on defect behaviors of ZnO thin film as a photocatalyst

Abstract

Al doped ZnO (AZO) thin films were prepared on silica substrates by sol-gel method. The films showed a hexagonal wurtzite structure with a preferred orientation along c-axis. Suitable Al doping dramatically improved the crystal quality compared to the undoped ZnO films. Dependent on the Al dopant concentration, the diffraction peak of (0 0 2) plane in XRD spectra showed at first right-shifting and then left-shifting, which was attributed to the change in defect concentration induced by the Al dopant. Photocatalytic properties of the AZO film were characterized by degradation of methyl orange (MO) under simulated solar light. The transmittance of the films was enhanced by the Al doping, and the maximum transmittance of 80 % in the visible region was observed in the sample with Al concentration of 1.5 at.% (mole fraction). The film with 1.5 at.% Al doping achieved also maximum photocatalytic activity of 68.6 % under solar light. The changes in the film parameters can be attributed to the variation in defect concentration induced by different Al doping content.

Open access