Acoustic Emission of Monolithic IGBT Transistors

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Abstract

Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off states of a single IGBT transistor in operation and the acoustic signal emitted by it. Acquisition of acoustic emission signals was obtained using a specialized sensor from Vallen. To record the received signal, a high resolution digital oscilloscope was used, which exported the recorded signal to a file, which enabled further digital processing of the acquired signals. The aim of the study was to determine the usefulness of acoustic emission detection methods to determine the possibility of damage to an element based on the recorded acoustic signal.

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