Electrically active defects in SiC Schottky barrier diodes

Open access

Abstract

The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One deep-level trap with an activation energy in the 0.29–0.30 eV range was revealed to be present in all the tested samples. The electrical characteristics of the trap indicate it is probably attributed to dislocations or to metastable defects, which can be responsible for discrepancies observed in I-V characteristics (see Ref. [2]).

[1] NEUDECK P. G., SiC Technology, in: Wai-Kai Chen, Boca Raton (Eds.) The VLSI Handbook 2nd, Florida: CRC Press, 2007.

[2] SYNOWIEC Z., Mater. Electron., 32 (2004), 5.

[3] LANG D.V, J. Appl. Phys., 45 (1974), 3023. http://dx.doi.org/10.1063/1.1663719

[4] FERENCZI G. and KISS J., Acta Phys. Acad. Sci. Hung., 50 (1981), 285. http://dx.doi.org/10.1007/BF03159444

[5] GELCZUK ł., DĄBROWSKA-SZATA M., JOŹWIAK G., Mat. Sci. Poland, 23 (2005), 625.

[6] OMLING P., WEBER E.R., MONTELIUS L., ALEXANDER H. and MICHEL J., Phys. Rev. B 32 (1985), 6571. http://dx.doi.org/10.1103/PhysRevB.32.6571

[7] FIGIELSKI T., Phys. Stat. Sol. A 121 (1990), 187. http://dx.doi.org/10.1002/pssa.2211210122

[8] WOSIŃSKI T., YASTRUBCHAK O., MąAKOSA A. and FIGIELSKI T., J. Phys.: Condens. Matter, 12 (2000), 10153 http://dx.doi.org/10.1088/0953-8984/12/49/314

[9] SGHAIER N., SOUIFI A., BLUET J.M. and GUILLOT G., Mat. Sci. Eng. C 21 (2002), 283. http://dx.doi.org/10.1016/S0928-4931(02)00081-4

[10] HENRY C.H. and LANG D.V., Phys. Rev. B, 15 (1977), 989. http://dx.doi.org/10.1103/PhysRevB.15.989

[11] SZATKOWSKI J., PŁACZEK-POPKO E., SIERAŃSKI K., FIAŁKOWSKI J., WRÓBEL J.M., BECLA P., Physica B., 273–274 (1999), 879. http://dx.doi.org/10.1016/S0921-4526(99)00539-6

[12] SCHUBERT E.F., Doping in III-V Semiconductors, Cambridge Univ. Press, 1993.

[13] BEYER F., HEMMINGSSON C., PEDERSEN H., HENRY A., ISOYA J., MORISHITA N., OHSHIMA T. and JANZÉN E., Mat. Sci. Forum, 645–648 (2010), 435. http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.435

[14] STAIKOV P., BAUM D., LIN J.Y. and JIANG H.X., Solid State Commun., 89 (1994), 995. http://dx.doi.org/10.1016/0038-1098(94)90501-0

[15] FANG Z-Q., LOOK D.C., SAXLER A., MITCHEL W.C., Physica B, 308–310 (2001), 706. http://dx.doi.org/10.1016/S0921-4526(01)00876-6

Journal Information


IMPACT FACTOR 2017: 0.854
5-year IMPACT FACTOR: 0.794



CiteScore 2017: 0.90

SCImago Journal Rank (SJR) 2017: 0.275
Source Normalized Impact per Paper (SNIP) 2017: 0.471

Metrics

All Time Past Year Past 30 Days
Abstract Views 0 0 0
Full Text Views 167 167 9
PDF Downloads 134 134 4