Analytical and experimental determination of the parasitic parameters in high-frequency inductor

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Abstract

The paper presents the results of calculations, simulations, and measurements of parasitic capacitance of winding in ferrite inductor suitable for cooperating with 2 kW DC-DC boost converter built using SiC JFET transistors, operating with a switching frequency of 100 kHz. The inductor winding is made of litz wire in a two-layer configuration. The lumped model of inductor winding was adopted. The results of analytical calculations have been compared with the results obtained from experimental investigations based on the resonance effect.

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Bulletin of the Polish Academy of Sciences Technical Sciences

The Journal of Polish Academy of Sciences

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IMPACT FACTOR 2016: 1.156
5-year IMPACT FACTOR: 1.238

CiteScore 2016: 1.50

SCImago Journal Rank (SJR) 2016: 0.457
Source Normalized Impact per Paper (SNIP) 2016: 1.239

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