DC characteristics of the SiC Schottky diodes

Open access

DC characteristics of the SiC Schottky diodes

The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained.

In the presented investigations, for relatively high currents and ambient temperatures, the influence of self-heating on the SiC Schottky diodes static characteristics is significant. The large (even 4 V for the ambient temperature 300°C) values of voltages corresponding to the nominal diode currents have been observed.

P. Friedrichs, "Silicon carbide power-device products - status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications", Phys. Stat. Sol. B 245 (7), 1232-1238 (2008).

O.J. Guy, M. Lodzinski, A. Castaing, P.M. Igic, A. Perz-Tomas, M.R. Jennings, and P.A. Mawby, "Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems", IEEE Power Electronics and Motion Control Conf. 1, 2464-2471 (2008).

G. Majumdar and T. Oomori, "Some key researches on SiC device technologies and their predicted advantages", Power Semiconductors 6, 18-229 (2009).

T. Funaki, J.C. Balda, J. Junghans, A.S. Kashyap, H.A. Mantooth, F. Barlow, T. Kimoto, and T. Hikihara, "Power conversion with SiC devices at extremely high ambient temperatures", IEEE Trans. on Power Electronics 22 (4), 1321-1329 (2007).

K. Sheng, "Maximum junction temperatures of SiC power devices", IEEE Trans. on Electronic Devices 56 (2), 337-342 (2009).

S. Pyo and K. Sheng, "Junction temperature dynamics of power MOSFET and SiC diode", Proc. IPEMC 1, 269-271 (2009).

B. Wrzecionko, J. Biela, and J.W. Kolar, "SiC power semiconductors in HEVs: influence of junction temperature on power density, chip utilization and efficiency", Preprint of Proc. IECON 1, CD-ROM (2009).

W. Janke and A. Hapka, "Nonlinear thermal characteristics of silicon carbide devices", Materials Science and Engineering, 8th Int. Conf.on Electronic Devices 1, CD-ROM (2003).

W. Janke, Thermal Phenomena in Semiconductor Elements and Systems WNT, Warszawa, 1992, (in Polish).

W. Janke and A. Hapka, "Inluence of series resistance on thermal limitations of SiC Schottky diodes", Int. Conf. 5th Wide Bandgap Materials - Progress in Synthesis and Applications 1, CD-ROM (2010).

W. Janke and A. Hapka, "The current-voltage characteristics of SiC Schottky barrier diodes with the self-heating included", 16th Int. Workshop on Thermal Investigations of ICs and Systems 1, CD-ROM (2010).

W. Janke, A. Hapka, and M. Oleksy, "Silicon carbide Schottky diode - a promising device for power electronics", PPEE 1, 247-252 (2007).

Bulletin of the Polish Academy of Sciences Technical Sciences

The Journal of Polish Academy of Sciences

Journal Information

IMPACT FACTOR 2016: 1.156
5-year IMPACT FACTOR: 1.238

CiteScore 2016: 1.50

SCImago Journal Rank (SJR) 2016: 0.457
Source Normalized Impact per Paper (SNIP) 2016: 1.239


All Time Past Year Past 30 Days
Abstract Views 0 0 0
Full Text Views 104 104 21
PDF Downloads 30 30 5